2SA100 Search Results

2SC2336

Abstract: 2SC2336B audio amplifier POWER TRANSISTORS 2SA1006 2SC2336A 2SA1006A 2SA1006B POWER TRANSISTORS Jmnic
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING

2SC2336

Abstract: 2SC2336B audio amplifier POWER TRANSISTORS 2SC2336A 2SA1006 2SA1006A 2SA1006B POWER TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION •With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SA1008

Abstract: 2SC2331
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.6V(Max.)@ IC= -1A ·Fast Switching Speed ·Complement to Type 2SC2331 APPLICATIONS ·Designed for use as a driver in devices such as switching

15 A PNP POWER TRANSISTOR

Abstract: 2SC2336B power transistor 2SA1006B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B APPLICATIONS

B0530

Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508

2SA1009

Abstract: nec 2sa1009 2SA1009A "Silicon Power Transistors"
Contextual Info: PNP SILICON POWER TRANSISTORS 2 D ESCRIPTION S A 1 9 . 2 S A 1 9 A The 2SA1009, 2SA1009A are PNP triple diffused transistors de­ signed for switching regulator, DC-DC converter and high frequency in m illim e te rs inches power amplifier application. FEATURES

2SA1007

Abstract: 2SA1007A 2SC2337A C2337A A1007A 2SC2337 72-SA
Contextual Info: SEC SILICON POWER TRANSISTORS ELEC TR O N DEVICE 2SA1007,2SA1007A/2SC2337,2SC2337A AU DIO FREQUENCY POWER AM PLIFIER,HIG H FREQUENCY POWER AM PLIFIER AND HIGH CURRENT SW ITCHING PNP/N PN SILICON EPITAXIAL TRANSISTOR BUILT IN EMITTER BALLAST RESISTORS DESCRIPTION

2sa1006

Abstract: 2SA1006B 2SA1006A 2SC2336 2SC2336A 2SC2336B
Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION •With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SC2336

Abstract: 2SC2336A 4 PIN TO 220 IC 2SA1006 2SA1006A 2SA1006B 2SC2336B
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier

2SA1006

Abstract: 2SA1006A 2SC2336 2SA1006B 2SC2336B audio amplifier POWER TRANSISTORS 2SC2336A POWER TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION • ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SA1008

Abstract: 2SC2331 transistors pnp 100v 10A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

2sa1046

Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1003 DESCRIPTION • High Current Capability • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.)

2SA1002

Abstract: 2SA-1002
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1002 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.

Contextual Info: 2SA1009L Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

KT835A

Abstract: b0330 MJ032 MJ-03 b0362 2SA699A matsua 2N3171 KT83 kt835 M0810
Contextual Info: POWER SILICON PNP Item Number Part Number 10 15 20 25 30 >= 1 A, SK3624 2N6421 MJ3584 BUX66A BUX66A 2N6211 MJ3585 2N6422 MJ4240 MJ4240 2 2 BUX66B BUX66B BUX66C BUX66C 2N6212 2SA1009M SPT6145 2SA1009K 2SA1009J 2 2N6213 2N6214 2SA1009AM 2SA1009AL 2SA1009AK 2SA1412Z

2SA1005

Contextual Info: NEC PNP SILICON TRANSISTOR ELECTRON DEVICE 2SA1005 DESCR IPTIO N The 2SA1005 is designed fo r use in RF a m plifier, conv., and PACKAGE D IM EN SIO N S oscillato r o f FM tuner. in millimeters inches 5 2 MAX. (0 204 MAX.) FEA TU R ES • High gain bandw idth product: fy = 4 0 0 MHz TYP.

2SA1007

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.

2SA1003

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1003 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.

TRANSISTOR 2SC2336A

Abstract: 2SA1006A 2SC2336A TRANSISTOR 2SA1006A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A APPLICATIONS

2SA1006

Abstract: 2SC2336 HIGH VOLTAGE PNP POWER TRANSISTOR TRANSISTOR 2SC2336 A Q P
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -180Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336 APPLICATIONS

2SC2331

Abstract: 2SA1008
Contextual Info: Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

2SC2331

Abstract: 2SC233 PDF 2SC2331 2SA1008
Contextual Info: Inchange Semiconductor Product Specification 2SC2331 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1008 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC-DC converters

2sa1008 nec

Abstract: 2SA1008 2SC2331
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.