2P 6M Search Results

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

2N763

Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)

Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

2n7633

Abstract: IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
Contextual Info: PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE 14-LEAD FLAT PACK Product Summary Part Number Radiation Level IRHLA7670Z4 100K Rads (Si) IRHLA7630Z4 300K Rads (Si) RDS(on) ID

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246 IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

MO-03

Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

2N7635M1

Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
Contextual Info: PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω

IT16B

Contextual Info: CellBus ASPEN Device Access Processor TXC-05810B DATA SHEET DESCRIPTION • 155 Mbit/s bidirectional throughput • RISC-based hardware architecture • Dual independent CellBus interfaces for increased bandwidth or redundancy • UTOPIA Level 2P interface for cell and

IRHLG7630Z4

Abstract: IRHLG7670Z4 MO-036AB
Contextual Info: PD-97191 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID CHANNEL 0.6Ω 1.25Ω

IRHG6110

Abstract: IRHG63110 MO-036AB
Contextual Info: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω

Contextual Info: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω

IRFG6110

Abstract: JANTX2N7336 JANTXV2N7336 MO-036AB 90436
Contextual Info: PD - 90436F POWER MOSFET THRU-HOLE MO-036AB IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P

Contextual Info: PD - 93783 IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω

IRF P CHANNEL MOSFET 10A 100V

Abstract: IRHG6110 IRHG63110 MO-036AB
Contextual Info: PD - 93783A IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω

Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International

68A diode

Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International

Contextual Info: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International

100V Single P-Channel HEXFET MOSFET

Abstract: 12v 10A dc motor mosfet driver
Contextual Info: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International

ex-nor

Abstract: EXNOR TTL
Contextual Info: CMOS Standard cell CMOS Standard c e ll/ S2PCS Series •S 2P C S Series Parameter Contents Technology Silicon gate CMOS I/O level TTL. CMOS. Schmitt Delay time Internal gate 2ns Typ Input mode TTL CMOS, P ull-u p /p ull-do w n resistor (5KÍ2,10KO, 50K O ) , schmitt trigger

DAC7545LU-BI

Abstract: lead side brazed hermetic DAC7545KP DAC7545LP PM-7545 AD7545 DAC7545 DAC7545GLP DAC7545JP DAC7545JU
Contextual Info: DAC7545 B U R R -B R O W N « EMMI CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTER Microprocessor Compatible FEATURES • FOU R-Q UADRAN T M ULTIPLICATION • LOW GAIN TC: 2P PM /°C typ • M ONOTONICITY GU ARAN TEED OVER T EM PER A TU R E • T T L/ C M O S LOGIC COM PATIBLE

baa9

Abstract: ba9u Z407 a9u 1u AAGZ ABAA 32ET ci cef AAEZ
Contextual Info: +-}zxzw+-}zx{w+-}zx| fbfrZdr]X yv~/.w *0 l c p s X c ^ j X yxx,*0 k Yt Y` m n o e [ q ^ [ L L L L L L L L L L L L L L v T /MX;TY30;SO1 ET ,322QET/5;NY4?aN 5R> ,raVC_hDUPY322GET /p`Y| 3GET kv_O M :2P? l>O}jWxssM= l2k6m ?}c}jK4Wuqx= e tuqy= bcRFK45pG,}c}j -e-b2yV