2N7299 Search Results

Contextual Info: fil h a r f r is U L P S E M I C O N D U C T O R 2N7299D, 2N7299R 2N7299H REGISTRATION PENDING Currently Available as FRK160 D, R, H December 1992 . R adiation Hardened N -C hannel Pow er M O SFETs Package Features • 50A, 100V, RDS(on) > 0.040Q TQ-204AE

2E12

Abstract: 2N7299D 2N7299H 2N7299R V5042
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK160 D, R, H 2N7299D, 2N7299R 2N7299H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 50A, 100V, RDS(on) = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

19500 TRANSISTOR 50A

Contextual Info: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q

Contextual Info: 2N7299H2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

Contextual Info: 2N7299R1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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