3N169
Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
Contextual Info: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5
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3n1693n1703n1712n7104+62n71052n71062n71072n71082n7109sdf8200
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2N7104
Abstract: 2N7116 2N7106 2N7105 2N7108 SD5400 SST211
Contextual Info: SILICONIX INC lêE D • Ö2S473S 4 ■ 2N7104 SERIES S ilico n ix incorporated N-Channel Lateral D M O S FETs V BR DS M AX (V) rds(ON) M AX (fl) C rss M AX (pF) 2N7104 2N7106 20 10 70 70 0.5 0.5 2 2 2N7108 15 70 0.5 2 PART NUMBER TO-72 For additional design information please see
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2n7104s5473sd013t2n7106+52n71082n71162n7105sd5400sst211
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SD214
Abstract: 2N7106 2N7104 2N7105 2N7107 2N7108 2N7109 SD210CHP SD211CHP 2M7105
Contextual Info: TOPAZ S E M I C O N D U C T O R DSE Wimmm D | ^OöSaEt, D D O G ^ Ô Ô _ T '- S | ir , ’ ' 2 ^ 2N7104, 2W7105, 2N7106 SEMICONDUCTOR ^ 7 1 0 7 ; 2 N7 1 0 8 , 2 N7 1 0 9 N-CHANNEl ENHANCEMENT-MODE D-M S FET SWITCHES ORDERING INFORMATION
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2n71042n71062m71082n7109+82n71q42n71052n71072n7108sd214sd210chpsd211chp2m7105
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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uc4250uc42500mil-std-883c19s00/+152n7109sdf8200fmn35sdf8201fmnz35sdf8202in5314in5309in52862n51632nb906in5313u1897e2n3456in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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uc4250uc4250cmil-std-883c2n2609+162n38212n38222n38232n48562n48572n48s82nb906in53132nb90in5286in5296solitrondevicesin5302in5287in53062n5902 to-92
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3N163
Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
Contextual Info: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0
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3n1633n1643n1723n173+92000u1500u4000u3n1653n1663n1693n1883n1893n190
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FMN1
Contextual Info: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0
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3n1633n1643n1723n173+42000u1500u4000ufmn1
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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j-23548k28742pa 0016 pioneerpioneer pa 0016+8transistors br 6822mpf104i9951djohnson motor 2 607 022 0132sk109 equivalentv01000jdg5043ckirf4431
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