2N7002K 2K Search Results

sot-23 Marking k7k

Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

2N7002KQ-7

Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

2N7002KQ-13

Abstract: 2N7002KQ-7
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

2N7002K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

sot-23 Marking k7k

Abstract: k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K DS30896
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2

2n7002k EQUIVALENT

Abstract: k7k transistor DS30896
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed

2N7002K

Abstract: MosFET
Contextual Info: 2N7002K 0.3A , 60V , RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-23 RDS(ON), VGS@10V, IDS@500mA=3

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed

Contextual Info: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 

MARKING C7K

Abstract: MSOT-23 2n7002k EQUIVALENT
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

k7k transistor

Abstract: k7k sot-23 transistor k7k sot-23 Marking k7k 2N7002KA 2N7002K-7 marking K7K marking code k7k transistor
Contextual Info: 2N7002K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50

MOSFET N SOT-23

Abstract: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

2N7002K

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

MARKING C7K

Abstract: 2N7002K-7 2n7002k EQUIVALENT
Contextual Info: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

2N7002K R1

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

2N7002KA

Contextual Info: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"