2N7002G Search Results

2N7002GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)

2N7002G-AE2-R

Abstract: 2N7002
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

codes marking 2N7002

Abstract: 2N7002 MARKING 702W 125OC 2N7002 2N7002-G B0910 transistor 702w
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7002-G

Abstract: MOSFET
Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S Maximum Ratings (at T =25°C) A Parameter Drain-Source voltage

transistor 702w

Abstract: 702W 3V02 702W MARKING mos n-channel SOT-23 702W SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

2N7002 sot363

Abstract: 2N7002G-AE3-R mosfet 2n7002 UTC 2N7002-AE3-R 2N7002L-AL3-R 2N7002 MARKING 2N7002G 2N7002 equivalent of 2N7002 sot-363 n-channel mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

702 TRANSISTOR sot-23

Abstract: 2N7002 MARKING 2N7002 MARKING 702 sot-23 MARKING CODE 70.2 2N7002 SOT-23 702 sot-23 2n7002 702 702 P TRANSISTOR code for 2n7002 125OC
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

88SA8052

Abstract: south bridge SIS 968 SIS671DX c3229 ic 4407A M671DX 88SA8052A1 sis 968 C3228 IT8511
Contextual Info: 5 4 3 2 1 F70SL Main BD. R1.0 BLOCK DIAGRAM CPU Merom2-3 D LVDS Thermal 5 D FSB 533/667/800 LCD Clock GEN 4 17 CRT RGB NV NB9M-GS PCIE 0-15 North Bridge Sis 671DX 53 18 HDMI TMDS DDR2 533/667 Mhz DDR2 SO-DIMM X2 12-14 6-11 MuTIOL 1G 16 C Debug CON C South

Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G Maximum Ratings (at T =25°C) A Value Unit VDS 60 V Drain current ID

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

transistor 702w

Abstract: 702W SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

mosfet 2n7002 UTC

Abstract: 2N7002 2N7002G-AE2-R 2N7002 sot363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N7002 Power MOSFET 0 .3 A, 6 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

SMD MARKING CODE 7002

Abstract: QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg
Contextual Info: MOSFET SMD Diodes Specialist 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C)