2N7002BKM Search Results

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

2012051

Abstract: NXP SMD mosfet MARKING CODE 2n7002bk
Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

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Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

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Abstract: 771-2N7002BKM315
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

NX3008NBKMB

Abstract: IP4303CX4 PCMF2DFN1
Contextual Info: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

NX3008NBKMB

Contextual Info: AN11159 Distributed power in portable devices Rev. 2 — 27 April 2012 Application note Document information Info Content Keywords distributed power, Low DropOut LDO regulators, DC-to-DC converter, load switch, quiescent current, load current Abstract This document describes concepts for portable appliances using

TRANSISTOR S1A 64 smd

Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

NX3008NBKMB

Abstract: PCMF2DFN1
Contextual Info: 使用本手册推荐的恩智浦主要产品 保护敏感的IC – 延长电池寿命 – 节省空间 接口/功能 说明 产品型号 封装 NFC天线保护 18/24 V双向低电容 ESD保护二极管 PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

BSS84AKS

Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
Contextual Info: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9