2N7002 DI Search Results

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA

Transistor SMD marking code NV

Abstract: 2n7002 2N7002 PHILIPS philips 2n7002 2N7002 PHILIPS MARKING 2N7002 SMD marking
Contextual Info: Philips Semiconductors - PIP - 2N7002; N-channel enhancement mode field-effect transistor Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information as of 2003-01-29 2N7002; N-channel Information My.Semiconductors.COM.

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

2N7002 Die Specification

Abstract: 2N7002
Contextual Info: 2N7002 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7002 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

702 TRANSISTOR sot-23

Abstract: 2N7002 MARKING 2N7002 MARKING 702 sot-23 MARKING CODE 70.2 2N7002 SOT-23 702 sot-23 2n7002 702 702 P TRANSISTOR code for 2n7002 125OC
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

702 sot 23

Abstract: 702 sot-23 2N7002 MARKING 702 RG 702 702 TRANSISTOR 2N7002 702 TRANSISTOR sot-23 702 sot
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

mosfet 2n7002 UTC

Abstract: 2N7002 2N7002G-AE2-R 2N7002 sot363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

702 TRANSISTOR sot-23

Abstract: alpha marking 2N7002 800mA 2N7002K1
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7002 Die Specification

Abstract: 2N7002-DIE 2N7002
Contextual Info: Supertex inc. 2N7002 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7002 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

mosfet 2n7002 UTC

Abstract: 2N7002L 2N7002 MARKING 2N7002 2N7002-AE3-R 2N7002L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2N7002 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2 1 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

2N7002G-AE2-R

Abstract: 2N7002
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

k72 transistor sot 23

Abstract: device marking k72 sot23 k72 transistor k72 sot 23 k72 sot-23 transistor k72 marking k72 transistor marking k7A 2N7002 60V SOT-23 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002 Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION 2 The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

2n7002 UTC

Contextual Info: UTC 2N7002 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION 2 The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents

702 sot 23

Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 TRANSISTOR

Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE