2N7002* APPLICATION Search Results

Transistor SMD marking code NV

Abstract: 2n7002 2N7002 PHILIPS philips 2n7002 2N7002 PHILIPS MARKING 2N7002 SMD marking
Contextual Info: Philips Semiconductors - PIP - 2N7002; N-channel enhancement mode field-effect transistor Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information as of 2003-01-29 2N7002; N-channel Information My.Semiconductors.COM.

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

702 sot 23

Abstract: 702 sot-23 2N7002 MARKING 702 RG 702 702 TRANSISTOR 2N7002 702 TRANSISTOR sot-23 702 sot
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

mosfet 2n7002 UTC

Abstract: 2N7002 2N7002G-AE2-R 2N7002 sot363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

mosfet 2n7002 UTC

Abstract: 2N7002L 2N7002 MARKING 2N7002 2N7002-AE3-R 2N7002L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2N7002 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2 1 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

2N7002G-AE2-R

Abstract: 2N7002
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION 2 The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

2n7002 UTC

Contextual Info: UTC 2N7002 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION 2 The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents

702 TRANSISTOR sot-23

Abstract: 2N7002 MARKING 2N7002 MARKING 702 sot-23 MARKING CODE 70.2 2N7002 SOT-23 702 sot-23 2n7002 702 702 P TRANSISTOR code for 2n7002 125OC
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

702 TRANSISTOR sot-23

Abstract: alpha marking 2N7002 800mA 2N7002K1
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

transistor 702w

Abstract: 702W 3V02 702W MARKING mos n-channel SOT-23 702W SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

ST2N transistor

Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

702 sot 23

Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 TRANSISTOR

Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

2N7002 Die Specification

Abstract: 2N7002
Contextual Info: 2N7002 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7002 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE

2N7002 Die Specification

Abstract: 2N7002-DIE 2N7002
Contextual Info: Supertex inc. 2N7002 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7002 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description