2N690 Search Results

2N690X

Contextual Info: SILICONIX INC 1SE D • Ö2S4735 0G13flbl 2 ■ fT 'S ilic o n ix 2N6905 SERIES innnrparated T-2.T-2.7 N-Channel J F E T Pairs The 2N6905 Series of high-performance monolithic |VGs1- y a s 2| V BR GSS 9fs. Iq PART N U M BER MIN MAX (V) MIN (mS) 2N6905 -3 5

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

50R1A160

Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
Contextual Info: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600

2N6909

Abstract: 2N6908 2N6910
Contextual Info: SILICONIX INC 1ÔE D fl5S473S 0013fiti3 b f X ’Siliconix 2N6908 SERIES J lÆ N-Channel JFET Circuits in c o rp o ra te d T-21-ZS The 2N6908 Series Is much more than a JFET. The addition of back-to-back diodes effectively clamps input "over-voltage” while a high-performance

2N6758

Abstract: 2N6902 QPL-19500
Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,

BTA12-700SW

Abstract: TLC226B BTA40-700B BTA12-700BW TLC336B BTB06-700BW BTB06-700SW btb04 600c BTA06-400GP BTA26-700B
Contextual Info: ALPHANUMERICAL INDEX Type Number AVS08-CB AVS08-CBI AVS10CB AVS10CBI AVS12CB 2N682 2N683 2N685 2N688 2N690 2N692 2N1771 2N1772 2N1774 2N1777 2N2619 2N3650 2N3651 2N3653 2N3655 2N3656 2N3658 2N5204 2N5205 2N5206 2N5207 BTA04-400A BTA04-400D BTA04-400S BTA04-400T

Contextual Info: 2N6902 h a r r is M S E M I C O N D U C T O R W 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12 A, 100 V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed

2N6902

Contextual Info: 2N6902 S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed for use with logic level 5V driving sources in applications

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

2N6910

Abstract: 2N6909 SST6908 VQD 30 2N6908 TO72 package n-channel jfet
Contextual Info: SILICONIX INC Ö254735 0013ôb3 b • fX 'S ilico n ix JLÆ in co rp o ra te d 1BE D 2N6908 SERIES "P27-Z5 N-Channel JFET Circuits The 2N6908 Series is much more than a JFET. The addition of back-to-back diodes effectively clamps Input "over-voltage” while a high-performance

2N6903 JANTX

Contextual Info: 2N6903+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)10 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.33 Minimum Operating Temp (øC)-55õ

2N6901

Contextual Info: • 3 3 430 2 57 1 GDS'ib'lE T3ö ■ H A R R HAS 2N6901 IS A u g u s t 1991 N -Channel Logic Level Power MOS Field-Effect Transistors L2 FET Package Features T 0 -2 0 5 A F • 1.69A , 1 0 0V BOTTOM VIEW • r D S {on) = 1-4 n GATE SOURCE • Design O ptim ized for 5V G ate Drive

2N6901

Contextual Info: TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6901 ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain — Source Voltage VDS 1 00

TO48

Abstract: C137p SCR SCR to-65 2n6822 C137N 2n6822n690 C137P TO48 A TO48 package 2N692
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Phase Control SCR's 16-40 Amps High Reliability *2N682-2N690 Is available in Jan and Jantx Spec Sheet

2N6904

Abstract: lO51A
Contextual Info: 2N6904 [g HARRIS August 1991 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T O -2 D 4 A A • 8A, 200V B O TTO M VIEW • rDS(on) = SOURCE • Design O ptim ized fo r 5V Gate Drive f DRAIN (FLANGE) • Can be Driven D irectly from QMOS, NMOS, TTL C ircuits

Contextual Info: 2N6902 ¡2 HARRIS A ugust 1991 N-Channel Logic Level Power M O S Field-Effect Transistors L2 FET Package Features T O -2 0 4 A A B O T T O M V IEW • 12A, 100V • rD S (o n ) = ° -2 n SO URCE • Design Optimized for 5V Gate Drive f D R A IN (F L A N G E )

2N6902

Contextual Info: 2N6902 in H a r r i s S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed

2N6901

Contextual Info: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements

2N6904

Abstract: L051 2N6895 QPL-19500 2N6904 JANTX 2N6901 2N6903 2N6901 JANTXV 741 terminal
Contextual Info: Logic-Level Power MOSFETs 2N6904 F ile N u m b e r 1880 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 8 A, 200 V r D s ( o n ) : 0.6 ft N-CHANNEL ENHANCEMENT MODE Features: • D e s ig n o p tim iz e d f o r 5 v o lt g a te d riv e ■ C a n b e d riv e n d ir e c tly fr o m Q -M O S ,

2N6903

Abstract: 92CS-4C745 SC12N
Contextual Info: 2N6903 g HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors (L2FET F e a tu re s P a ck a g e T 0 -2 0 5 A F • 0.9 8A , 2 0 0 V B O TTO M VIEW • rD S(on) = 3 .6 5 H • Design O p tim ized fo r 5V G ate Drive • Can b e D riven Directly from Q M O S, NM O S, TT L Circuits

25RIA120

Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50

2N6905

Abstract: 2N6906 2N6907 Siliconix JFET Pairs 2N5911 SST404 M10295
Contextual Info: SILICONIX INC lflE D •I Ö2S4735 0013flbl 2 ■ C T S ilic o n ix 2N6905 SERIES_ in c o rp o ra te d N-Channel JF E T Pairs - r - z - ? The 2N6905 Series of high-performance monolithic dual JFETs' features extremely low noise, tight offset voltage and drift over temperature