2N6084
Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W
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n6084230mhz175mhzsd1012+121014-c2m60811229-osd10182n60s22n60802n60842n6ostransistor 36o att 93 n 08358 transistortransistor n6
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300in53882n5161germanium+64m28germanium drift transistor2n50701ns2482n5271inverter welder 4 schematic
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1n50001n50011n50021n5003+141n51491n51501n51531n51551n51581n51591n5160max 6438 geo semiconductors2n6058transistor bf 1752n39022n56961n5788germanium itt
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2N6054
Abstract: 2N6056
Contextual Info: SEMTECH CÔRP SÔE D • 313^13^ 0003304 OST « S E 100 WATT 8 AM P CONTINUOUS, 16 AM P PEAK 2N 6054, 2n6056 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage C o lle cto r B ase Voltage E m itte r B ase Voltage V dc VcBO 80 Vdc ho
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2n60542n605600033ch |
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