2N5884 SEMI Search Results

2N5884

Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
Contextual Info: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features

2N5884G

Contextual Info: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features

2N5886G

Abstract: 2N5886 2N5885G IB 115 2N5883 2N5884 2N5883G 2N5884G 2N5885 2N5984
Contextual Info: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features

2N5886 MOTOROLA

Abstract: 2N5984 2N5883 2N5884 2N5885 2N5886
Contextual Info: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage —

2N5883

Abstract: 2N5884 2N5885 2N5886
Contextual Info: Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 ・High power dissipations APPLICATIONS ・They are intended for use in power linear and switching applications

2N5886

Abstract: 2N5885 2N5883 2N5884
Contextual Info: SavantIC Semiconductor Product Specification 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications

2N6886

Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

2N5883

Abstract: 2N5884 2N5885 2N5886
Contextual Info: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications

Contextual Info: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High−Power Transistors . . . designed for general−purpose power amplifier and switching applications. http://onsemi.com • Low Collector−Emitter Saturation Voltage − 25 AMPERE COMPLEMENTARY

l5 transistor PNP

Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247

2N5984

Abstract: 2N5886 2N5883 2N5884 2N5885
Contextual Info: ON Semiconductort PNP Complementary Silicon High-Power Transistors 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — • • • VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

2SA1046

Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

2N5984

Abstract: 2N5886 2N5883 2N5884 2N5885
Contextual Info: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. http://onsemi.com • Low Collector–Emitter Saturation Voltage – 25 AMPERE COMPLEMENTARY

2N5886

Abstract: 2N5883 2N5884 2N5885
Contextual Info: 2N5883 2N5884 2N5885 2N5886 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching

2N5883

Abstract: 2n5885
Contextual Info: Complementary Silicon High-Power Transistors PNP 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

TIP360

Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436

2N5886 MOTOROLA

Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884
Contextual Info: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N 5883 C om plem entary Silicon H igh-P ow er Transistors 2N 5884* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N 5885 Low Collector-Emitter Saturation Voltage —

2N5883

Abstract: 2N5884 2N5885 2N5886
Contextual Info: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage V C B S A T = 1 0 V M a X ) e l C = 1 5 A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 10 A

NES 2N5672

Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
Contextual Info: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE

Contextual Info: NEW ENGLAND SEMICONDUCTOR 5T E D • fa5b*m3 0QQQ054 434 « N E S '7 > 3 3 - o / = 3-50A V c E O S U S = 40-1O O V fT = 2-6 MHz PNP TO-3 lc (M A X ) Case 803 Case 804 Type No. NPN Compie* ment VCEO <sus> <V) (M AX) 1C (A) hFE @ IC/VCE {min-max @ A/V) VC£ (SAT)

2n5882

Contextual Info: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN

IRF 548

Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.