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2NS884 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6886 Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —	OCR Scan	2n5883 2n5884 2n5885 2n5886 +82ns884 2ns886 2n6886 2n5984 transistor 2n5884 high-power npn silicon power transistor 2n5886 motorola m/2n588s	PDF
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	orporation/464 ch-8105 germanium drift transistor 2n4895 +7germanium transistor epitaxial mesa transistor sec tip31a halbleiter index transistor transistor bd222 bd699 equivalent kd 2060 transistor	PDF
2M3055 Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908 Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047	OCR Scan	2n3055 2n3715 2n3716 2n3771 +162m3772 2n3791 2n3792 2n4234 2n4398 2n4399 2m3055 b0w94c mje520 2m5886 13007 hf mj 13008 2n5337 iu 1047 tip120 pnp bd908	PDF

Catalog Datasheet

Type

Document Tags

PDF

2N6886

Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —

OCR Scan

2n5883 2n5884 2n5885 2n5886 +8

PDF

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

OCR Scan

orporation/464 ch-8105 germanium drift transistor 2n4895 +7

PDF

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047

OCR Scan

2n3055 2n3715 2n3716 2n3771 +16

PDF