2N4403 EBC Search Results

LBL15

Abstract: 2N4400 2N4401 2N4402 2N4403
Contextual Info: O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS

2N4405

Abstract: 2N4400 2N4401 2N4402 2N4403
Contextual Info: 2N4402 2N4403 THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. CASE TO-92A V EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

SOT-23 2N4403

Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

Contextual Info: MICRO CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4403 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

2N3906 EBC

Abstract: 2N4403 EBC 2N3906EBC
Contextual Info: Bipolar transistors-US/European series PNP transistors Table 5 General purpose small signal amplifiers Part no. 2N5087 Term arrmnt 1 23 EBC B VCbo B V c e o B V EbO •C B0 V CB h FE I c &V ce VCE &VBE @ lc C 0 b »T @ ' c sat (sat) max min min min min

2N5376

Abstract: 2N5381 2N5088 equivalent 2N5383 2N5450 2N4401 2N4402 2N4403 2N4410 2N4952
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION TO-92 LEAD VCBO VCEO VEBO ICBO @ VCB CODE (nA) (V) (V) (V) *ICES (V) *VCES *ICEV MIN MIN MAX MAX EBC 60 40 6.0 100* 35 hFE @ VCE @ IC *hFE (1kHZ) TO-92-18R VCE (SAT) @ IC Cob (V) (mA) (V)

Contextual Info: TO-92/TO-226AA “ 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain V CE sat *T •c Device Type Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @ v CB hFE hre (mA) (V) (V) (V) (nA) (V) @ lc c»*1 V (V) (mA) (MHz) (mA)

Contextual Info: PNP TRANSISTORS T| TO -92/TO -226A A l 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at T.A = 25°C DC Current Gain *CBO v CE sat 't 'c Max. V(sn)CBO V (BRJCEO V (BR)EBO Max. Device Type @ v C8 h FE h FE @ 'c @ v CE (mA) (V) (V) (V) TP2907A

2n5401 2n3906

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA ‘2N ’ a n d ‘T P’ D EV IC E TYPES ELECTRICAL CHARACTERISTICS a l TA, = 2 5 C ^CBO D C C u r r e n t G a in v CE sat 't 'c V (BR)CBO v (BR)CEO v (BH)EBO M a x . @ v CB D e v ic e M ax. Type (m A ) (V) TP2907 500 TP2907A

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA U23 ‘2N ’ an d ‘TP’ DEVIC E TYPES ELECTRICAL CHABACTERISTICS at A = 25°C DC Current Gain ^CBO v CE sat fT >c Max. V(BH)CBO V(SH)OEO Device (mA) Type (V) Max. @ v CB @ 'c (V) (V) (nA) (V) Min. Max. (mA) @ V CE Max. (V)

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

2N5383

Abstract: 2N5381 2n5771
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TVPENa FA M ILY L EA D CODE VcBO (V) v CEO v EBO •CBO (V) (V) m h FE VCBC (V) *'C E S •TO-92-18R MIN *VC E S MIN MIN *IC EV @ V CE @ lc (V) (mA) TO-92-18R MAX •off *T (mA) (pF) (MHz) *Crb MAX *TYP

2N5381

Abstract: 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO CODE (V) VCEO VEBO ICBO @ VCB (nA) (V) (V) *ICES (V) *VCES *ICEV hFE @ VCE @ IC *hFE (1kHZ) TO-92-18R VCE (SAT) @ IC Cob (V) (mA) (V) (mA) 500 fT NF toff (pF) (MHz) (dB) *Crb *TYP

pnp 2N3906 beta

Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

npn 8050 ecb

Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
Contextual Info: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

2M5087

Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers