2N3906 EQUIVALENT TRANSISTOR Search Results

Contextual Info: SHD431006 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 678, REV. - PNP SWITCHING TRANSISTOR SHD431006S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to 2N3906 • Surface Mount Package Absolute Maximum Ratings* Symbol

2N3906 JEDEC

Abstract: 2N3906 2N3906 MOTOROLA 2n3906 equivalent 2N3905 2N3905 MOTOROLA 2N3906 OR EQUIVALENT 2N3906 APPLICATION 2N3905 Equivalent transistor 2N3905
Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

2N3906RL1

Abstract: 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 3906 TO-92 2N3906 ON 2N3906 pin diagram
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

C2N3906

Abstract: 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

2N3906RL1

Abstract: 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906 pin diagram 2N3906 JEDEC 2N3906 2N3906RL1G
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage

D2N3906

Abstract: 2N3906-G 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage

2N3906G

Abstract: 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 1N916 2N3906-G
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage

2n3906 equivalent transistor

Abstract: data sheet transistor 2n3906 transistor 2N3906 datasheet transistor 2N3906 PNP 2N3906 2N3906 PNP 2n3906 specification 2n3906 datasheet 2n3906 equivalent 2N3906
Contextual Info: 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 ƔFEATURES 2 BASE . Power Dissipation 1 EMITTER PCM: 625 mW Ta=25к 1 2 . Collector Current 3

2N3906 JEDEC

Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO 40 V dc C o lle c to r-B a s e V oltag e

PNP 2n3906 331

Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor
Contextual Info: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

GES6220

Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo VCE sat Type @10mA(V) Min. Max. @ lc(mA) I I • m 1 GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7 elt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Coltector-Emltter Voltags: Vc£o =25V • Collector Dissipation: I Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007

2N3901

Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006

7021-D-E-XXXX

Abstract: 2N3906 Cree MC-E 2n3906 equivalent transistor 2N3906 OR EQUIVALENT
Contextual Info: TM 7021/7023 BuckPlus Wide Range LED Power Module DATA SHEET Page 1 of 8 Product Overview The 7021 and 7023 BuckPlus LED Power Modules are a line of true current regulated drivers for powering LEDs. The BuckPlus line of LED drivers are the ideal choice for powering all types of highbrightness and high-power LED Packages and LED arrays.

4N35 CONTROL CIRCUIT

Abstract: LH1056 2N3906 Central 2N3906 4N35 IL252 IL350 ILD255 LM324 LM3900
Contextual Info: Optocouplers Isolate Modem Data Access Arrangement Appnote 53 by Bob Krause Lap Top, Palm Top, and Pen Based computer modem manufactures are seeking ways to accommodate the small form factor of the PCMCIA peripheral cards. They are looking for devices to replace the bulky magnetic and electromechanical components normally found in the modem’s telco line interconnection. Modem supplier have found that optocouplers satisfy

KST3906 samsung

Abstract: 2N3906 MAX1669 MAX1669EEE thermostat samsung
Contextual Info: 19-1574; Rev 0; 1/00 Fan Controller and Remote Temperature Sensor with SMBus Serial Interface Features The MAX1669 fan controller includes a precise digital thermometer that reports the temperature of a remote sensor. The remote sensor is a diode-connected transistor—typically a low-cost, easily mounted 2N3906 PNP

2n4125 equivalent

Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

2n4125 equivalent

Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

Contextual Info: MOTOROLA Order this document by MRF1000MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MA MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.