2N3906 EBC Search Results

Mmbt3906

Abstract: 2N3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

2n3906 2a

Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

Contextual Info: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.

2n3906

Abstract: MMBT3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

2N3906 MICRO ELECTRONICS

Abstract: 3906 pnp 2N3903 2N3904 2N3905 2N3906
Contextual Info: 2N3905 2N 3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS _ . THE 2N3905 AND 2N3906 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLEMENTAHT TO 2N3903 AND

2N304

Contextual Info: :» NPN SILICON PUNAR EPITAXIAL TRANSISTORS CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. I u EBC ABSOLUTE MAXIMUM RATINGS

2N3904

Abstract: 2N39Q4 2N3906 2N39 2N3903 2N3905 tr 2n3904 2N3904 hfe
Contextual Info: NPN SILICON PUNAR EPITAXIAL TRANSISTORS :» I CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. EBC ABSOLUTE MAXIMUM RATINGS

1N3904

Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904
Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

IC2 7805

Abstract: 2N3904 pin diagram 1N4148 BC517 IC1 7805 IC1 LM317 2n3904 2n3906 pic programmer 2N3906 pin diagram 74LS244 diagram
Contextual Info: Universität Ulm, Abt. Allg. Elektrotechnik und Mikroelektronik, R. Lares, 07.10.99 PIC Programmer for LPT PC – Circuit Diagram V.2 D2 1N4004 SW1 Power Transf. 15V 4,5W CON2 +13.5V GL1 B80 C1500 3 1 2 IC1 LM317 50mA ff. 230V ~ adjust for C1 2200µF 35V E.

3906 pnp

Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Contextual Info: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -

2N3906 EBC

Abstract: 2N4403 EBC 2N3906EBC
Contextual Info: Bipolar transistors-US/European series PNP transistors Table 5 General purpose small signal amplifiers Part no. 2N5087 Term arrmnt 1 23 EBC B VCbo B V c e o B V EbO •C B0 V CB h FE I c &V ce VCE &VBE @ lc C 0 b »T @ ' c sat (sat) max min min min min

Contextual Info: PNP TRANSISTORS T| TO -92/TO -226A A l 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at T.A = 25°C DC Current Gain *CBO v CE sat 't 'c Max. V(sn)CBO V (BRJCEO V (BR)EBO Max. Device Type @ v C8 h FE h FE @ 'c @ v CE (mA) (V) (V) (V) TP2907A

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA U23 ‘2N ’ an d ‘TP’ DEVIC E TYPES ELECTRICAL CHABACTERISTICS at A = 25°C DC Current Gain ^CBO v CE sat fT >c Max. V(BH)CBO V(SH)OEO Device (mA) Type (V) Max. @ v CB @ 'c (V) (V) (nA) (V) Min. Max. (mA) @ V CE Max. (V)

2n5401 2n3906

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA ‘2N ’ a n d ‘T P’ D EV IC E TYPES ELECTRICAL CHARACTERISTICS a l TA, = 2 5 C ^CBO D C C u r r e n t G a in v CE sat 't 'c V (BR)CBO v (BR)CEO v (BH)EBO M a x . @ v CB D e v ic e M ax. Type (m A ) (V) TP2907 500 TP2907A

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

60V PNP TO-92

Abstract: 500ma 40v pnp
Contextual Info: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)

Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX

z10m

Abstract: psa56
Contextual Info: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.

2N5551YCECB

Contextual Info: I Small Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEAD v E B O *C B O Ï V C BC nA (V) (V) (V) * 'C E S •V CES * *'C E V MIN MIN MAX (V) M IN 2N2712 NPN AMPL/SWITCH ECB 18 18 5.0 500 18 v CE hFE VC BO v CEO CODE (V) ® I C V C E (S A T ) @ , C

2N4058

Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

n3904

Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off