2N3821 FET Search Results

2N3822

Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

2N3823 equivalent

Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

2N3822

Abstract: 2N3823 2n3821 2N3823 fet datasheet TO72 package n-channel jfet 2N3822 2N3823 equivalent 2N3821 JANTXV 2N3821 JANTX 2n3821 fet br 6500
Contextual Info: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current

2N3823

Abstract: 2N3822 2N3821 2N3821 JANTX
Contextual Info: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current

UC734

Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Contextual Info: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA

Contextual Info: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823

TIS34

Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
Contextual Info: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500

2n3824

Abstract: 2N3822 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2n3821 2N3621
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | fa3fa7a5»4 0Dabbl3 fl | 2N3821, 2N3822 2N3824 CASE 20-03, STYLE 1 TO-72 TO-206AF M AXIM UM RATINGS Symbol Value Drain-Source Voltage VDS 50 Vdc Drain-Gate Voltage Vd g 50 Vdc Gate-Source Voltage Rating Unit Vg S -5 0 Vdc Drain Current

2N3823

Abstract: 2N3821UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

2N3822 equivalent

Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

2N5545

Abstract: 2n3824 2N3821 2N3921 2N3922 2N5547
Contextual Info: -Jolitron I P I M l P Ü K g 'F Ä T T A IU S N IM-CHANNEL JU N C T IO N FET Devices. Inc. CHIP NUMBER m Ai TBT □ CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum .0X7" 0.432mm Backside Contact: 3,000 A Gold • ASSEMBLY RECOMMENDATIONS .016"

Contextual Info: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

2n5458N

Abstract: MPF111 J201-18 2N3821 J202 J203-18 2N3822 2N4220 PN4303 2N4222
Contextual Info: GENERAL G EOM ETRY Section 4 Product Specifications D E V IC E lUT sìgIììì FET Product Specifications (Confd) PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z X Ii

J201 Replacement

Abstract: 2N6658 fet cross reference 2N3323 3N155 Siliconix JFET 2N3823 fet 2N4393 JFET 2N5457 3N157
Contextual Info: GENERAL G EOM ETRY Section 4 Product Specifications D E V IC E lUT sìgIììì FET Product Specifications (Confd) PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z X Ii

2SK30ATMY

Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

FET U310

Abstract: FET 2N4416 2N2606 2N5397-2N5396 2N5396-2N5397 2N5906 2N3687A 2n4117 jan
Contextual Info: -Jbtttron Devices. Inc mw TO §MUË<gÏÏ \F\W\R IN TRO DUCTIO N TO THE F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is desirable to have a high ON-OFF-ratio. It is also desirable to be able to switch both positive and negative signal voltages over a range as large as

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

2N4360

Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.

j201 jfet

Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

J201 Replacement

Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

2N3823

Abstract: 2N5485 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N5458 2N5459
Contextual Info: T P r o d u c t S p e c i f i c a t i o n s C o n fd lUT sìgIì ì ì F E Product Specifications G E N E R A L PURPOSE DEVICE —I —1 G EO M ETRY (Section 4) . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books