2N3711 TY Search Results

transistor 2N3711

Contextual Info: m 2N3711 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3711 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE T O -92 MAXIMUM RATINGS _ .205 |5 201 .1 7 5 4 451 OIA. lc 30 mA V ce 30 V P diss

2N3707

Abstract: 2N3710 2N3709 2N3708 2N4058 2N3711 2N37H
Contextual Info: 2N3707 2N3708 i 2N3709 2N3710 2N3711 +1 S ILICON NPN T RANSI ST OR ECB JEDEC T O - 9 2 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 0 7 designed 2N3710, for low 2N3711 le v e l, ap p lic a tio n s . MAXIMUM RATINGS S eries low n o i s e types 2N3707)

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

2n3904 TO-92

Contextual Info: Transistors TO-92 JEDEC Standards Numbers •N P N Transistors General purpose small signal amplifiers Package B V cbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) CEBC) 30V 2N3860 TO -92 (ECB) 2N5088 BVEBo Min. hFE Vce (sat)

2n4494

Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Contextual Info: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495

2n4058

Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

2N3711

Abstract: 2N3707 2N3710 2N3709 MPS3707 MPS3709 MPS3711 MPS3710 S3710 IC 5330 k
Contextual Info: MPS3707 silicon MPS3709 MPS3710 MPS3711 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTORS . designed for use in low -current am plifier applications. Devices S im ila r Electrically to 2 N 3 7 0 7 , 2 N 3 7 0 9 , 2 N 3 7 1 0 , 2N3711 M A X IM U M R A T IN G S

Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4 0 6 2 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I •¡Hi THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

BC548 Texas Instruments

Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
Contextual Info: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available

2N4058

Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '

2N915

Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:

2N3606

Abstract: 2N3605 2N3564 2N3111 2N3694 2N3693 2n3194 2N3417 2N3662 2N3663
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vceo ^CEO V EBO (V) Min (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE

2N3606

Abstract: 2N3564 2N3605 2N3693 2N3694 2N3827 2N3901 npn transistor to 92 2N3607 2N3417
Contextual Info: TO-92 Plastic Package Traiisistors NPN Electrical Characteristics (Ta=25°C, Unless Otherw se Spec fied) Maximum Ratings Type No. 'c (W) A) 5Tc=25“( hFE @ lc & (mA) ^CEO (V) Min (V) Min •Vro (V) Min 2N3417 50 50 5 0.625 ),1 0.1 50 80 540 2 2N3564 30

2N3904 TO-92 type

Abstract: 2N3877
Contextual Info: DEVICE TYPE PACKAGE BVCfO BVCBO 8VEBO ICBO @ VCB V M IN IV I M IN (V I M IN |m A I M A X (V I HFE @ VC & 1C M IN - M A * (V I l">A| COB FT NF IpM M AX IM H H Idb) M A X 12 .12 12 12 100 100 100 100 2N3703 2N3704 2N3705 2N3706 2N3707 PNP NPN NPN NPN NPN

Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX

2N4058

Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

2N4250

Abstract: 2N5133 2N4249 2N4288 2N4291 to 106 2n5133 2N4248 2N3901 2N3707 2N3708
Contextual Info: TYPE NO. 2N3721 2N3798 2N3799 2N3843 2N3843A 2N3844 N N N N N N P P N N CASE MAXIM UM RATINGS Pd ImW 'c V CEO mA) (V ) TO-92B TO-92B TO-92B TO-92B TO-92B 360 360 360 360 360 200 200 200 200 200 30 30 30 30 30 TO-92B TO-18 TO-18 TO-92B TO-92B 200 360 360

2N3565

Abstract: 2N3692
Contextual Info: Low Level and General Purpose Amplifiers TY PE POLA ­ NO. RITY CASE M A XIM UM RATINGS HFE Pd IC VCEO mW (mA) 00 min max (T Cob N.F. IC VCE V CE(sat) max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 120+ 12 12 12 10 10 - 120+ 120+ 120+ 120+ - 10

2n2712 data sheet

Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

2N4058

Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
Contextual Info: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

2N4288

Abstract: 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3417 2N3564 2N3662
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vceo (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE

2N2926

Abstract: R-067 2N3055 2N3133 2N3404 x20a transistor 2N3819 2N3053 2N3054 2N3134
Contextual Info: 58 T ran sisto rs Continued Notes 1> (2 <3> Minimum value Average value Max. unilateraiized power gain Max. frequency of oscillation (5) With heat sink Ptot: Max. total dissipation in free air at 25°C ambient temp. V » » : Max. collector-to-base voltage, emitter