2N3501 SEM Search Results

Contextual Info: Data Sheet No. 2N3501 Generic Part Number: 2N3500 Type 2N3501 Geometry 5620 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/366 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-39 case. •

Contextual Info: 2N3501 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3501 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V 150 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC

2C3501

Abstract: 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L
Contextual Info: Data Sheet No. 2C3501 Generic Packaged Parts: Chip Type 2C3501 Geometry 5620 Polarity NPN 2N3498, 2N3499, 2N3500, 2N3501 Chip type 2C3501 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for switching and amplifier applications.

2N3501

Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501J • JANTX level (2N3501JX)

2n3501 JANTX

Abstract: 2N3501 2N3501J 2N3501JS 2N3501JV 2N3501JX
Contextual Info: 2N3501 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

2N372A

Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665

2N3501

Abstract: 2N3501J 2N3501JS 2N3501JV 2N3501JX MIL-PRF-19500/-2N3501
Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

Contextual Info: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)

150M

Abstract: 2N3501
Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

G524

Abstract: HTRB 2N3501 sem 2C3501KV 2C3637KV
Contextual Info: Data Sheet No. CP3501 2N3498, 2N3499 2N3500, 2N3501 Chip Type 2C3501KV Geometry 5620 Polarity NPN REF: MIL-PRF-19500L/366 30 MILS B E 30 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

2N3500

Abstract: 2N3499 2N3501 2N3498
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

Contextual Info: 2N3501 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • NPN High Voltage Planar Transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N3498

Abstract: 2N3499 2N3500 2N3501
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

2N3501 MOTOROLA

Abstract: 2N3501 2N3500 2N301 2N501
Contextual Info: Boca Semiconductor Corp. BSC 2N3500 2N3501* MAXIMUM RATINGS U nit S ym bol Value Collector-Emitter Voltage VCEO 150 Vdc Collector-Base Voltage v CBO 150 Vdc Emitter-Base Voltage Rating vebo 6.0 Vdc Collector Current — Continuous 'c 300 mAdc Total Device Dissipation @ T a = 25°C

2M3501

Abstract: k3499
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3498JAN, 2N3499JAN, 2N3500JAN, 2N3501 JAN, JTX, JTX, JTX, JTX, JTXV, JTXV, JTXV, JTXV, JAN S JAN S JANS JANS CRYSTAlOfJCS 2805 Veterans High* Processed per MIL-S-19500 366 Suite 14 NPN Silicon Sm all-Signal T ra n sis to rs Ronkor,Kof*ia. N.Y. 1*

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2N 3501 $ id L SEMICONDUCTORS Type 2N3501 G eneric Part Num ber: 2N3500 G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S

2N3499

Abstract: 2N3498 2n3500
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3498 2N3499 2N3500 2N3501 C8YSTALONCS 2B05 Veterans Highway Suite 14 NPN Silicon Small-Signal Transistors Ronkontoma, N.Y. 11776 . d e sig n e d fo r g e n e ra l-p u rp o se sw itc h in g and a m p lifie r a p p lica tio n s in h ig h -vo lta g e

Contextual Info: 2N3501 MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • • Meets MIL-S-19500/366 Collector-Base Voltage 150V

Contextual Info: 2N3501 MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • • Meets MIL-S-19500/366 Collector-Base Voltage 150V

2N3501 JANTX

Abstract: JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 November 2010. MIL-PRF-19500/366N 5 August 2010 SUPERSEDING MIL-PRF-19500/366M 22 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,