2N3055 PIN Search Results

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N3055

Abstract: 2n3055 voltage regulator 2N3055 series voltage regulator 2n3055 application note 2N3055 power circuit 2n3055 pin 2n3055 amplifier 2N3055 NPN Transistor 2N3055 power amplifier circuit 2N3055 TO-3
Contextual Info: 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS

2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application
Contextual Info: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc

Contextual Info: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc

2N3055

Abstract: 2n3055 pin
Contextual Info: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

2n3055

Abstract: 2n3055 pin 2N3055 power circuit
Contextual Info: 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit
Contextual Info: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc

2N3055 series voltage regulator

Abstract: 2n3055 voltage regulator 2N3055 power circuit 2N3055 power amplifier circuit equivalent transistor 2n3055 2n3055 application note 2N3055 TO-3 NPN Transistor 2N3055 power transistor 2n3055 2N3055
Contextual Info: DC COMPONENTS CO., LTD. 2N3055 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 Pinning 1 = Base

2n3055 motorola

Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
Contextual Info: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*

2n3055

Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
Contextual Info: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc

2n3055

Abstract: hfe 2n3055 2n3055 amplifier 2N3055 silicon 2n3055 pin 2n3055 IC 2N3055 specification 2n3055 complement 2n3055 25 2N3055 equivalent
Contextual Info: Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ2955 ・DC Current Gain -hFE = 20–70 @ IC = 4 Adc ・Collector–Emitter Saturation Voltage VCE sat = 1.1 Vdc (Max) @ IC = 4 Adc

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N3055

Abstract: 2n3055 pin hfe 2n3055 2n3055 amplifier 2N3055 specification 2n3055 IC MJ2955 2n3055 datasheet 2n3055 complement 2N3055 silicon
Contextual Info: SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage VCE sat = 1.1 Vdc (Max) @ IC = 4 Adc

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS

2n3055

Abstract: 2N3055 to3 2N3055 JANTX 2N3055 semelab
Contextual Info: 2N3055 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin hfe 2n3055 Mj2955 power transistor pnp transistor 2N3055
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N30555

Abstract: 2N3055-5 2N3055 2N3055 to3 2N3055 JAN
Contextual Info: 2N3055/5 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2n3055

Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
Contextual Info: 2N3055/7 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3055-6

Abstract: 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V
Contextual Info: 2N3055/6 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

2n3055

Abstract: 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955
Contextual Info: M m ospec COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * VCE sat - 1 . 1 V (Max.) @ lc = 4.0 A, lB = 400 mA

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

MCC 2N3055

Abstract: 2N3055 2n3055 pin 2n3055 application note
Contextual Info: MCC 2N3055
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 10 Amp NPN Silicon Power Transistors 80 W Features • • Designed for general-purpose switching and amplifier applications

2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc