2N3053, TO-39 PACK Search Results

2N3053

Abstract: 2N3053 equivalent transistor 2n3053 2N3053 NPN transistor 2N3053, TO-39 PACK 2N3053A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N3053 VCEO 40 Collector -Emitter Voltage 1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage

transistor 2n3053

Abstract: pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 NPN transistor 2N3053 2N3053 equivalent 2N3053 transistor 2N3053A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VCEO Collector Emitter Voltage

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS 2N3053 2N3053A TO-39 General Purpose, Medium Current Amplifier Applications.

transistor 2n3053

Abstract: 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053 2N3053
Contextual Info: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

2N3053

Contextual Info: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency FT = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

BCY78

Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
Contextual Info: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20

BC16

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100

TRANSistor BC108

Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100

2N1131

Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

BSY52

Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

BC178

Abstract: BC107 BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N3053

Abstract: 2n3053 motorola motorola 2n3053 transistor motorola 2n3053 transistor 2n3053 2N3053 equivalent C2N3053 2N3053A
Contextual Info: MOTOROLA Order this document by 2N3053/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3053 2N3053A NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS LIFETIME BUY Rating Symbol 2N3053 2N3053A Unit VCEO 40 60 Vdc Collector – Base Voltage

transistor 2n3053

Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

2N696

Abstract: 2n706 BC178 BC107 bc107 complement 2N1131 2N1132 2N4037 2N697 BC177
Contextual Info: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037

BCY69

Abstract: 2t80 GQ017
Contextual Info: ZETEX SEMICONDUCTORS 32C D H ^70570 GQ017S7 3 2 C 0 1757 D ! 2 ~ ~ T ~ Z 7 -ô L_ NPN G EN ER A L PU R P O S E - Continued Type Vc b Max VCEO lc V V mA Max VcE sat at V hFE lc mA Ib mA M in fj at at Ptat a* *l"amb Package =25°C Min Max lc lc mA MHz mA mW

N706A

Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

2n2222 itt

Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C

Contextual Info: 32C D cl ci 7 D S 7 ö I 0 D 01 7 5 Ö H • Z ET B ^ ZETEX SEMICONDUCTORS PNP GENERAL PURPOSE TABLE 2 PNP SILICON PLANAR GENERAL PURPOSETRANSISTORS T h e d e v ic e s sh o w n in th is ta b le are general p urp ose tran sistors d e sig n e d fo r sm a lla n d m edium

BCY78

Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

N3053

Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037