2N300 Search Results

Contextual Info: tPioducki, tfnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3008 USA SILICON REVERSE-BLOCKING TRIODE THYRISTOR 1 IIAO.II, .DIA-. 0.110 0.170 1 I O.MO . r 1 ~ =» =3 01* L 0.050- \-*~ 01 JO O.ltj

BRX49

Abstract: 2N5061/2N5062 BRX47 BRX49 2N5061 "Silicon Controlled Rectifiers" 2N3005 BRX44 2N878 2N6565 2N3002
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts 0.8 IT (AMPS) @ Tc (°C) ITSM(AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 1 TO-18 CASE TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005

BRX49 SCR

Abstract: c106b1 scr scr c103b SCR C106D1 scr 2N5062 SCR Brx45 c103b SCR 2N5061 scr 2n3668 2N4170
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ T c (°C) ITSM(AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 ; TO-18 CASE f TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

2N3004

Abstract: 2N3001 2N3002
Contextual Info: TYPES 2N3001, 2N3002,2N3003, 2N3004 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS 350 mA • 30 to 200 VOLTS • 20 ;uA GATE SENSITIVITY A LL PLANAR, OXIDE-PASSIVATED JUNCTIONS NO SOLDER OR FLUXES 33 00 H mC< •o r rr m > mw • High Operating Temperatures

2N3008

Contextual Info: 2N3008 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products

SCR 2N1595

Abstract: scr tag 2 TAG SCR br 203 tag scr SCR TAG SCR 2N1599 TAG 203 TAG 2-50 tag br 203 2N4214
Contextual Info: f l ✓ SCR IN METAL PACKAGE T O -3 9 T O - 18 15V 2N 8 76 2N884 30V 2N 8 77 2N885 2N3001 2N 3 0 0 5 TAG 06 Y BR 203 50V v v DRM RRM B L O C K IN G V O LT AG E 60V 2N 8 78 2N 8 86 2N 3 002 2N 3 0 0 6 TAG 0 6 Y Y 100V 2N 8 79 2N887 2N 3003 2N 3 0 0 7 TAG 06 A

Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts 0.8 IT (AMPS) @ Tc (°C) ITSM (AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 11 TO-18 CASE TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

2N3007

Contextual Info: 2N3007 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

2N3007

Contextual Info: 2N3007 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products

2N5061

Abstract: BRX47 BRX49 BRX45 2n3004 2N6565 2N5062 2n5064 BRX49 BRX46 N5063
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts IT (AMPS} T cfC ) fTSM(AMPS) 0.8 I 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 ; TO-18 CASE TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

2N3005

Abstract: 2N3006
Contextual Info: TYPES 2N3QQ5, 2N3006, 2N3007, 2N3008 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS 350 mA • 30 to 200 VOLTS • 200 n A GATE SE N SIT IV IT Y A L L PLANAR, O XIDE-PASSIVATED J U NCTIO N S-NO SO LD ER OR FLUXES • High Operating Temperature Low Forward Voltage Drop

Contextual Info: 2N3008 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products

2N3007

Contextual Info: 2N3007 Dimensions in mm inches . Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products

2N3009

Abstract: 2N3013 2N3014 LB-23
Contextual Info: Data Sheet 2N3009 2N3013 2N301A Central Sem iconductor Corp. NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-18 CASE

Contextual Info: TELEPHONE: 973 376-2802 (212) 227-6008 FAX: (973) 376-0060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3002 SILICON CONTROLLED SWITCH mechanical data The devices are in a hermetically sealed welded case with a glass-to-metal seal between case and leads.

2N3009

Contextual Info: eS&mi-dontLjLctoi ZPioauata., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3009 2N3013 2N3014 NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors

Contextual Info: na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2992 (212) 227-6005 FAX: (973) 37*6060 2N3004 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR mechanical data The devices are in a hermetically sealed welded case with a glass-to-metal seal between case and leads. Approximate

SCR 2N1599

Abstract: SCR 2N1595 BRX49 SCR c106B1 scr scr c103b CS83-110N 2N4174 scr 2N3669 2N4172
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ TC (°C) •TSM (AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 I TO-18 CASE I TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

SFT308

Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475