2N2905 ST Search Results

2n2905

Abstract: 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905
Contextual Info: PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol

2n2905

Abstract: 2N2904 2N2904 PNP Transistor transistor 2N2905 2N2904A 2N2904 transistor 2n2905a Transistor 2N2905A 2n2904 2n2905 TRANSISTOR 2n2904
Contextual Info: 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications.

Contextual Info: i, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2905 TO-39 2W2905 are PNP silicon planar epitaxial transistors. It is intended for driver stage of power amplifiers and switching applications.

2N2905

Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors

Contextual Info: 2N2905 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905J • JANTX level (2N2905JX)

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2n2905

Abstract: 2N2904 2n2905 configuration 2n2904 2n2905
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2n2905 configuration circuit and

Contextual Info: 2N2905 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905J • JANTX level (2N2905JX)

2n2905 configuration circuit and

Abstract: 2n2905 configuration
Contextual Info: 2N2905 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905J • JANTX level (2N2905JX)

Contextual Info: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package Switching And Linear Application DC VHF Amplifiers Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: N AMER PHILIPS/DISCRETE h lE » bb53^31 0058121 855 2N29 U S 2N2905A APX A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service. QUICK REFERENCE DATA

typical 2n2222 npn transistors

Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

equivalent diode for in457

Abstract: IN457 equivalent kelvin 1102 2n2905 replacement 2N2905 cross reference replacement for 2n2905 resistor cross reference strain guage LT1031 PLATINUM RESISTOR
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

1N2905

Abstract: of 2n2905 4-20ma current source L 9090 2N2905 AMSREF-03GP AMSREF-03GS OP-02 OP-77 REF-03
Contextual Info: Advanced Monolithic Systems AMSREF-03 +2.5V PRECISION VOLTAGE REFERENCE FEATURES APPLICATIONS • +2.5 Volt Output …….…………………… ± 0.6% Max • Temperature Voltage Output ………………. 2.1mV/°°C • Wide Input Voltage Range ………………… 4.5V to 40V

2N2905 cross reference

Abstract: AC01 DAC ad581 replacement for 2n2905 rosemount LH0070 LT1031 LT1031B LT1031C LT1031D
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

2N5416 MOTOROLA

Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.

2N2368

Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Contextual Info: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

LT1236-5

Abstract: 236bi5 LT1236C-5 236ac5 LT1236-10 236BI1 236ac1 AD586 236ai5 LT1236
Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

BFY52 equivalent

Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device