2N2904 TRANSISTOR Search Results

2N2904

Abstract: 2N2904A T-37-17 TRANSISTOR 2n2904 W744 2n2904 philips
Contextual Info: 2N2904 2N2904A JL PHILIPS INTERNATIONAL SbE D m 7110021, 0042^20 560 BiPHIN r -3 7 -t 7 SILICON PLANAR EPITAXIAL TRANSISTOR|S P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

2N2477

Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

hep 230 pnp

Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
Contextual Info: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage

2N2904 equivalent

Abstract: 121-219
Contextual Info: 2N2904AL and 2N2905AL Qualified Levels: JAN, JANTX, JANTXV and JANS PNP SWITCHING SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904AL and 2N2905AL switching transistors are military qualified up to the

j525 transistor

Abstract: BPT18E02 J525 TRANSISTOR 2n2904 2N2904 transistor j525
Contextual Info: BIPOLARICS, INC. Part Number BPT18E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 2 Watts @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' BPT18E02 is a high performance silicon bipolar transistor

Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

2N3638A

Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A

High-Voltage Amplifiers

Abstract: 2N4033 2N4209 transistor 2N4033 2N2369 2N3227 2N3506 2N3724 BCY71 motorola 2N3735
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

by205

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL761 TIPL761A
Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature

BY205-400

Abstract: TIPL765A 2N2222 2N2904 D44H11 D45H11 TIPL765 2n2222 npn
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

2N2475

Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

NPN transistor 2n2222A

Abstract: 2N2708 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220
Contextual Info: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max

2N3866 pin diagram

Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series

bc140

Abstract: ZT Ferranti 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC140 equivalent

Abstract: 2n4036 equivalent BAW66 Bc161 marking 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N2102

Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
Contextual Info: NPN SWITCHING T A B L E 3 - N P N S IL IC O N P L A N A R M E D IU M A N D H IG H S P E E D S W IT C H IN G T R A N S IS T O R S The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments.

2n1606

Abstract: 5A53 CK721 2sa525 SA537 SA495 GT123 1441-1225 25a480 TO114 package
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

germanium transistor CK722

Abstract: CK722 CK721 SSA480 SA5-37 2sa525 2SC621 SA52B 2SC912 2N3400
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BC16

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100

MPS5771

Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154