2N TRANSISTOR HIGH Search Results

transistor 6032

Abstract: 2N6033 sss 1120 2n6032 60322n transistor 6032 mh
Contextual Info: 2N 6032 2N 6033 NPN SILICON TRANSISTORS,EPITAXIAL COLLECTOR TRANSISTORS SILICIUM,NPN' COLLECTEUR EPITAXIE - High current, high speed, high power transistor Transistor rapide fort courant, forte puissance - Fast switching and am plifier applications Transistors de commutation et d'amplification rapide

TO111 package

Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
Contextual Info: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,

2N5657

Abstract: 2N5655
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 5655 2N 5656 2N 5657 Plastic NPN Silicon H igh-Voltage Power Transistor ‘Motorola Pr*ferrod Dtvlc« . . . designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.

transistor 40410

Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

3440S

Abstract: 2N3440S hFE-10 G-2675
Contextual Info: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

2N4391

Abstract: 2n4393 2N43 J3060 2N4392
Contextual Info: PRELIMINARY SPECIFICATION SEC FIELD-EFFECT TRANSISTORS ELECTRON DEVICE 2N4391,2N4392,2N4393 HIGH SPEED SW ITCHING AND CHOPPER N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION The 2N 4391, 2N 4392, 2N 4393 are depletion mode ju n ctio n field effect transistors, designed fo r high speed sw itching and

BIPOLAR TRANSISTOR 2n

Contextual Info: MOTOROLA Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N 5655 2N 5656 2N 5657 P lastic NPN Silicon H ig h -V o ltag e Pow er Transistor . . . designed for use in line-operated equipment such as audio output amplifiers; low -current, high-voltage converters; and AC line relays.

2N3440S

Contextual Info: 2N 3440S SILICON PLANAR NPN H IG H -V O LTA G E AM PLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am p lifie r applications. The com plementaryPNP type is 2N 5415S.

5415S

Contextual Info: 2N 5415S SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R The 2N 5415S is a silicon planar epitaxial PNP transistor in Jed ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am plifier applications. The com plementary NPN type is 2N 3440S.

555T

Abstract: me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555
Contextual Info: fllultipl* Transistor/ Darlington amplifier/ r Electrical C ha racteristics @ M a x im u m R atin gs T Y P E NO. PD C BVc b O LV CEO h jrg e v EBO @ T a = 25°C ME 2N 2N 2N 2N 5308 5305 5306 5307 5308 BC 516 BC 517 m in. 250m W 500m W 5Q 0m W 500m W 500m W

2369A

Abstract: transistor 2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 jUA to 100 m A.

2369A

Abstract: 2n2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED S ATU R ATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 ,uA to 100 mA.

c 3725 transistor

Abstract: 2N3725 3725 transistor 3725
Contextual Info: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V

2N6518

Abstract: 2N6520
Contextual Info: 2N 6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 ° C

25A1075

Abstract: 2N6497 2N6498 2N6499
Contextual Info: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors

2N5672

Abstract: 5671 2N5671 2n transistor high
Contextual Info: 2N 5671 2N 5672 NPN S ILIC O N T R A N S IS T O R S ,E P IT A X IA L COLLECTOR T R A N S IS T O R S S I L I C I U M , N P N C O L L E C T E U R E P I T A X IE - High speed, high current, high power transistor Transistor de puissance rapide fo rt courant i 90 V

2N4119

Abstract: 2n4117a SMP4117 4119a 4118A
Contextual Info: B9 9-97 2N 4 1 1 7 , 2 N 4 1 1 7 A , 2N 4118, 2 N 4 1 1 8 A , 2 N 4 1 1 9 , 2 N 4 1 1 9 A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR ^ • AUDIO AMPLIFIERS Absolute maximum ratings at TA = 25°C • ULTRA-HIGH INPUT IMPEDANCE AMPLIFIERS Reverse Gate Source & Reverse Gate Drain Voltage

d 772 transistor

Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

2n 2894

Abstract: D 2894 transistor k 30 transistor 2894
Contextual Info: 2N 28 94 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL - HF small signal amplification A m plification H F petits^signaux v CEO -1 2 V •c - 2 0 0 mA - High speed switching at low current Commutation rapide; faible courant

2N5415

Abstract: FT 5415 transistor 2n 2N5416
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.

Contextual Info: TO SHIBA 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RDS(ON) = 4-2n (Typ.)

TRANSISTOR SE 140

Abstract: 2N3442 MOTOROLA TRANSISTOR SE 135
Contextual Info: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N 3442 H igh-P ow er Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and