2N 3904 TRANSISTOR Search Results

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

transistor 2N 3904

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most

2n3904 418

Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

transistor Bc 540

Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device bvceo Type @ 1 0 m A V Min. 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 25 40 40 40 40 00 00

BE10N

Abstract: GES6012 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. I I • m 1 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 NPft NP» NM mp un 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 GES6003 GES6004

BFS59

Abstract: MPS6566 transistor ZTX302 ZTX108 ZTX502 BC182P BC546P BCY65EP BFS61 MPS2222A
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - N P N S IL IC O N P L A N A R G E N E R A L PURPO SE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

itt 3904

Abstract: A5T3904 a5t3903 itt 3903 A5T3906 2n3904, itt
Contextual Info: TYP ES 2N3903, 2N3904. A5T3903, A5T3904 N -P -N S IL IC O N T R A N S IS T O R S B U L L E T IN N O . D L 'S 7 3 1 1576, N O V E M B E R 19 71 - R E V ISE D M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R S ! F O R G E N E R A L P U R P O S E S A T U R A T E D -S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S

2N3904 L6

Abstract: 2N3904
Contextual Info: TO SHIBA 2N3904 Transistor U n it in m m Silicon NPN Epitaxial Type 51MAX. For General Purpose Switching and Amplifier Applications * Features • Low Leakage Current - ICEV = 50nA Max. , IBEV = -50nA (Max.) @ VCE = 30V, VBE = -3V • Excellent DC Current Gain Linearity

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device I I • m 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 60 40 40 40 GES5827 GES5828 GES6000 GES6001 GES6002 40 40 25 25 25 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010

Contextual Info: KSP6520/6521 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C

T120TA

Abstract: MM1758 2SC97 BC216A usaf522es067m 2N2222B 2SC502 2SC580 PT4830 S7560
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol

FAIRCHILD 3904

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5

Contextual Info: MP8780 CMOS 8-Bit Video Analog-to-Digital Converter JTE X A R March 1998-3 FEATURES BENEFITS 15 MHz Input Bandwidth -0.3 dB SNR > 44 dB @ Fin 2.4 MHz 1.2 to 5.0 Volts (Peak to Peak) Input Range 1/2 LSB Dynamic DNL at 14.4 MHz 3/4 LSB Dynamic DNL at 17.7 MHz

TC2484

Abstract: GW 9n BFW74 BFW75 BFW76 BFX53 T046 BF123 TES311 TRANSISTOR J.15
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol

800-0400

Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 VCE (sat) Max. @ lc (m A ) 40 00 00 60

GES5822

Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON S IG N A L TRAN SIS TO R S G E N E R A L PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

HP 4502

Abstract: 3-pin IR Receivers LF L-0452 marking 6n1 HP 2531 optocoupler HP 4503 hp 6n136 VDE 0542 l0452 HCPL-4502L
Contextual Info: That H E W L E T T mLtim P A C K A R D Single Channel, High Speed Optocouplers Technical Data 6N135/6 HCNW 135/6 HCNW 4502/3 HCPL-0452/3 HCPL-0500/1 HCPL-4502/3 F eatu res • 15 kV/jJs Minimum Common Mode Transient Immunity at VCM = 1500 V 4503/0453 • High Speed: 1 Mb/s

18f67j50

Abstract: pic18f87j50 datasheet PIC18F87J50 RH063 PIC18F67J50 pmp* SRAM PIC18F65J50 PIC18F66J50 40 pin lvds header PIC18F6XJ5X
Contextual Info: PIC18F87J50 Family Data Sheet 64/80-Pin High-Performance, 1-Mbit Flash USB Microcontrollers with nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39775B Note the following details of the code protection feature on Microchip devices: •

TRANSISTOR TRANSMIT FM G V L C R PCB REV C

Abstract: OOK ASK receiver 433mhz BP23 BP60 HC-49U LQFP-48 RF2905 1.2ghz transmitter antenna colpitts oscillator 401 MHz use of balanced frequency discriminator in fm
Contextual Info: RF2905 11 433/868/915MHZ FM/FSK/ASK/OOK TRANSCEIVER Typical Applications • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems • Battery Powered Portable Devices

p3801a

Abstract: charger accu 12v 12 volt zener diode on pspice SI4463 MBRD835 2N 3904 transistor
Contextual Info: ANALOG DEVICES High Frequency Switch Mode Dual Li-Ion Battery Chargers ADP3801/ADP3802 FEATURES Stand-Alone L i-Io n Battery Chargers High End-of-Charge V oltage Accuracy ±0.4% @ +25°C ±0.75% @ -10°C to +70°C Intelligent End-of-Charge O utput Signal Pin Programmable Cell Num ber Select