2N 333 EQUIVALENT Search Results

2n 333 equivalent

Abstract: bf 333 transistor
Contextual Info: 16 Megabit 2M x8-Bit Multi-Purpose Flash SST39VF016Q Advance Information FEATURES: • Organized as 2M x8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector-Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical)

BC140 equivalent

Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

equivalent transistor 2N1711

Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

iwaki resistor

Abstract: DV0P37300 BBC25N
Contextual Info: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

2N4399

Abstract: 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4398 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N5745 2N4398 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M M T 4»W 2N 3442 PNP S ilico n H ig h -P o w e r TVansistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low Coilector-Emitter Saturation Voltage — IC = 15 Ade, VcE sat) = 1-0 Vdc (Max) 2N4398.99

MT8816

Abstract: A-168 MSAN-133
Contextual Info: Application Note MSAN-133 Designing Large Switching Matrices Using Zarlink Analog Switch Arrays ISSUE 1 Introduction January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its

MT8816

Abstract: MSAN-133 k2n12x16x131
Contextual Info: Application Note MSAN-133 Designing Large Switching Matrices Using Mitel Analog Switch Arrays  ISSUE 1 January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B O A R D M O U N T, 1ST A N D 2N D L E V E L S T A C K IN G C O N N E C T O R S Board Mount 1.5 mm2 Solid Wire w/lnterlock 5.0 mm Centerline, 1st and 2nd Level, Stacking Color-Gray UL R a tin g -300 V, 13.5 A

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

DS3738

Abstract: SP8400 SP8401 SP8402 SP8402/KG/MPES
Contextual Info: SP8402 Very Low Phase Noise Divider by 2N DS3738 - 2.1 March 1994 The SP8402 is a very low phase noise divider which divides by powers of two. The S0, S1, S2 data inputs select the division ratio in the range 21 to 28. Special circuits techniques have been

Contextual Info: SP8402 Very Low Phase Noise Divider by 2N DS3738 The SP8402 is a very low phase noise divider which divides by powers of two. The S0, S1, S2 data inputs select the division ratio in the range 21 to 28. Special circuits techniques have been used to reduce the phase noise

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

AN2841

Abstract: STP24DP05 STEVAL-ILL015V1 stm32 spi STM32 UM0588 USBUF01P6 stm32 timer STMicroelectronics date code format stm32 STM32 103
Contextual Info: AN2841 Application note LED dimming implemented on STM32 microcontroller 1 Introduction This application note deals with the general principles of LED dimming. This note also focuses on the use of pulse width modulation PWM for digital dimming. Its implementation

varistor 565-1

Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Contextual Info: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B O A R D M O U N T, 1ST A N D 2N D L E V E L S T A C K IN G C O N N E C T O R S Eurostyle Board Mount 2.5 mm2 Solid Wire w/lnterlock 5.08 mm Centerline, 1st and 2nd Level, Stacking UL Rating - 3 0 0 V, 17.5 A

kvg crystal FILTER XF9-B

Abstract: XF-9B 2f3 transistor SL6440 Broadband Amplifiers Application Notes WESCOn mixer Broadband Amplifiers Application Notes, appendix 3 KVG filters vmos fet plessey sl6440
Contextual Info: AN156 Intermodulation, Phase Noise and Dynamic Range AN156 - 3.2 September 1993 The radio receiver operates in a non-benign environment. It needs to pick out a very weak wanted signal from a background of noise at the same time as it rejects a large number to much stronger unwanted signals. These may be

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

58-Rev

Abstract: nt5ds64m8
Contextual Info: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts

Contextual Info: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts

Contextual Info: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts