2N 1990 Search Results

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

TN1613

Contextual Info: nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VBH Drv.ce Polar Can 25 «C W max mA 2N 1470 2N IbOJ TN 1564 7N 1S6S 7N 1565 A 2N 1S66 Tit I566A 2N157T 2N t573 TN 1574 TN 1613 TN1711 7N 1711 A 7N 1889 TN IB9O IK 1893 TN 1983 ?N 1990 TN 1990 « 7N 1990S

transistor 2N4033

Abstract: 2N4031 2N4033 2N4032 2N4030
Contextual Info: N AMER PH ILI PS/ DI SC RET E bTE T> • ^1,33^31 DD2fil4t ISS M A P X _ ' _ \ ^2N 4030 to 2N 4033 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power

Contextual Info: N AMER PHILIPS/DISCRETE b'JE T> bbSB^l 00E6133 577 2N 3U iy 2N 3020 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA

npn transistor wc

Abstract: 2N1990 transistor wc cb7 transistor VCB0-100V transistor wc TO39 silicium power transistor 2N 1990 transistor 2n
Contextual Info: 2N 1990 NPN SILICON TRANSISTOR, PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R - Low current switching C o m m u ta tio n fa ib le co u ra n t - Nixie driver Com m ande des tubes " n ix ie s " v CBO 100 V ^21 25 Maximum power dissipation Case TO-39

74HC

Abstract: 74HC58
Contextual Info: 74HC58 SSI D U A L A N D -O R G A T E FEA TU R ES T Y P IC A L • Output capability: standard • Iq q category: SSI SYM BOL G E N E R A L D ESCRIPTIO N tPHL/ iPLH propagation delay 1n to 1Y 2n to 2 Y C| input capacitance CpD power dissipation capacitance per gate

2N3966

Abstract: 219T
Contextual Info: 2N 3966 J V _ N-CHANNEL SILICON FET S ym m etrica l n-channel, d e p le tio n ty p e , planar e p ita xia l ju n c tio n fie ld -e ffe ct tran sisto r in a T O -72 m etal envelope w ith th e shield lead connected to th e case. The tra n sisto r is suitable in a va rie ty o f

2N2219 transistor

Abstract: Transistor 2N2219A 2n2219 2N221 2N2219A Silicon Epitaxial Planar Transistor philips 1N916 9L9V 2N2219/BC547 hie hre hfe
Contextual Info: 11 N AUER PHILIPS/DISCRETE blE D • h t,S 3 1 3 1 > DDEÖDBl 34T ■ APX A ZN’^ y 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -39 m etal envelope w ith th e c o lle c to r connected t o th e case. T he y are p rim a r­ ily intended fo r high speed switching. The 2N 2 2 1 9 is also suitable f o r d.c. and v .h .f./u .h .f. am plifiers.

LA 7687 a

Contextual Info: GEC PLESSEY [ s e m i c o n d u c t o r s ! SP8861 1.3 GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER Supersedes September 1990 Edition The SP8861 is a low power single chip synthesiser intended for professional radio applications, and contains all the elements (apart from the loop amplifier) to fabricate a

LA 7687 A

Contextual Info: GEC P LESS EY | S E M I C O N D U C T O R~S~1 SP8853 1.3 /1 .5 GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER S u p e rs e d e s S epte m be r 1990 Edition The SP8853 is a low power single chip synthesiser

Contextual Info: H H G E C PLESSEY ADVANCE INFORMATION D.8.9640 2.0 SP8861 1.3GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER Supersedes September 1990 Edition The SP8861 Is a low power single chip synthesiser intended for professional radio applications, and contains all

Contextual Info: P ^ p i G E C S I M P L E S S E Y I O l\ l> I l I <> K ADVANCE INFORMATION S D.S. 3640 ¿ 0 SP8861 1.3GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER (Supersedes September 1990 Edition The SP8861 is a low power single chip synthesiser Intended for professional radio applications, and contains all

Contextual Info: OCT 2 9 1990 • SEPTEMBER 1990 PLESSEY PRELIMINARY INFORMATION SEMICONDUCTORS — SP8861 1.3 GHz PROFESSIONAL SYNTHESISER S u p e rsed e s January 1990 Edition The SP8861 is a low power single chip synthesiser intended for professional radio applications, and contains all

MT8816

Abstract: crosspoint 256 x 256 diode matrix Electro Switch Mitel Semiconductor MSAN-133
Contextual Info: Application Note MSAN-133 Designing Large Switching Matrices Using Mitel Analog Switch Arrays  ISSUE 1 January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor 2n 929

Abstract: transistor BF 697
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • S3033TM 00Û0010 T ■ PROFESSIONAL GRADE APPLICATIONS - Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias IC mA VCE Volts min/max ICM mA max PTA mW max PTC W typ ICBO VCE sat fT Volts MHz PA

2N698

Abstract: cd 4011 be 2n657 to39 2N1990
Contextual Info: JEDEC TRANSISTORS continued @ > 'S u u > u <J > a LLl 1< _E c Ë Ul u_ _c 60 100 (40) (40) 30/90 30/90 20/60 40/120 200 200 150 150 60 20/60 40/120 40/120 40/120 40/120 150 150 150 150 150 150 150 150 10 30 X CD u. > < j= _o CL X eg E </> UJ o > X CO S o

aa2n

Abstract: 2N2195 2N2243 2N1420 3053-1000 2N2192 2N2219 2N696 A-80080 2N698
Contextual Info: general purpose, amplification, switching - metal case commutation, am plification, usage général boît \e r m éta I th o m so n -csf T ype C h a r a c t e r is tic s a t 25 °C M a x im u m ra tin g s NPN PNP P to t h21E v CEO VCER* / >C V C E sat !

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

transistor 2n 929

Abstract: IR 1838 IR 1838 T transistor a 1837 1838 pin configuration ir mml 600 33T4 transistor BF 697
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • S3033TM 00Û0010 T ■ PROFESSIONAL GRADE APPLICATIONS VCEO VCBO Volts Volts Device min min VEBO Volts hFE at bias min min/max IC mA VCE Volts ICM mA max PTA mW max PTC W typ ICBO VCE sat fT MHz Volts