2LNA Search Results

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322130BMS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 2M x 8bit DRAMs in 28 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322130BMS/SG is

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

TC521000P

Abstract: ysm-c
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521000P/J 1M B i t 256K X 4 Field M e m o r y PRELIMINARY :D E S C R I P T I O N The TC521000P/J is a CMOS lMbi t Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, e ach equipped with an 8 bit serial shift register (32K

AC050

Abstract: NEC C141 c141 nec st c049 PB6310 123Ln AC044 ga01 AC041 C102 M 346
Contextual Info: N E C ELECTRONICS INC "?5 SEC DÌJ bME7SSS 000fi233 t. J"' T-42-11-13 //P B 6 3 0 0 100K S E R IES BIPO LA R E C L -2 GATE ARRAYS NEC Electronics Inc. M arch 1985 Revision 1 Description ¿fPB6301 Specifications_ T h e //PB6300 (100K) se rie s c o n sists of three ultrah igh -sp e e d E C L gate arrays, com patible with an E C L 10 0 K interface. Respectively, the ¿/PB6301, //PB6310,

awl9966

Abstract: AWL9966RS36P8 IEEE 802.11n
Contextual Info: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • 3% Dynamic EVM @ POUT = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe at

Contextual Info: G M 23C 16000B LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS M ASK ROM Description Pin Configuration The GM23C16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.