2K X 8 CMOS RAM Search Results

GR281

Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Contextual Info: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use

STK25C48

Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs

Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times

STK25C48

Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times

ttl SUBSTITUTION DATA BOOK

Abstract: STK25C48
Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROM • 20ns, 25ns, 35ns and 45ns Access Times

Contextual Info: VITELIC V61C33 HIGH PERFORMANCE LOW POWER 2/C x 8 BIT CMOS DUAL PORT MEMORY OBJ ECU VE SPECIFICATIONS = = = = = Features Description • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C33 is a CM OS 2K x8 high-speed dual port static RAM with advanced arbitration logic

CY7C136-55JC

Contextual Info: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Functional Description Features • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

2N24

Contextual Info: Product specification Philips Semiconductors CMOS single-chip 8-bit microcontrollers DESCRIPTION 83C751/87C751 • 2k x 8 ROM 83C751 2k x 8 EPROM (87C751) The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost.

CY7C136-55NC

Contextual Info: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

CY7C136-55NC

Contextual Info: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

CY7C136-55NI

Abstract: cy7c136 CY7C132 CY7C142 CY7C146 CY7C146-15NC CY7C136-25JXC CY7C136-55NC
Contextual Info: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

85C82

Contextual Info: . 85C82 Microchip 2K 256 X 8 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES • Low power CMOS technology The Microchip Technology Inc. 85C82 is a 2K bit Elec­ • Organized as one block of 256 bytes (256 x 8) trically Erasable PROM. The device is organized as 256

B8432

Abstract: sram 2k x 8 MB8432
Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 if CYPRESS 2K x 8 Dual-Port Static RAM Functional D escription Features • 0.8-raicron CMOS for optimum speed/ power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY7C136/CY7C142 and CY7C146 are high-speed CMOS 2K by 8

cy7c245a-35dmb

Abstract: 7C245A CERAMIC LEADLESS CHIP CARRIER CY7C245A CY7C245A35DMB CY7C245A-35PC C245A-1 CY7C245A-25DMB
Contextual Info: 1CY 7C24 5A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil

Contextual Info: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 2K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns

LH5118D

Abstract: LH5118N-10 lh5118
Contextual Info: LH5118/ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

AG2221

Abstract: LH5118N-10
Contextual Info: LH5118 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5118 is a static RAM organized as 2,048 x 8 bite. It is fabricated using silicon-gate CMOS process technology. • Power consumption:

Contextual Info: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data

aS3131

Abstract: u2331
Contextual Info: CY7C245A P YP: V « *1 i. X - 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically pro­ grammable, read only memory packaged in a slim 300-mil

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V

8403602ZA

Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
Contextual Info: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V