2F TRANSISTOR Search Results

Contextual Info: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

marking 2f 3

Abstract: MMBT2222A MMBT2907A marking 2f
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F

CMBT2907

Abstract: CMBT2907A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

2SA1037KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)

CMBT2907

Abstract: CMBT2907A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

CMBT2907

Abstract: CMBT2907A
Contextual Info: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

B 660 TG

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS

Contextual Info: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4

2F PNP SOT23

Abstract: marking 2f 2f transistor SOt23
Contextual Info: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)

Contextual Info: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR

BCS49C

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

pnp 2f

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

pnp 2f

Abstract: marking 2F
Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR

2F P marking

Abstract: CMBT2907 CMBT2907A
Contextual Info: CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors M a ik in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F 3.0 2 .8" 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: SANYO SEMICONDUCTOR CORP 15E D I ? n 7 G7 b 0 DQ4 3 4 Ö fl T-Z0-2f\ 2SC3294 201OA NPN Planar Silicon Darlington Transistor Driver Applications 1422A Duo . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain.

TIP112

Abstract: TIP115 TIP117
Contextual Info: PANASONIC INDL/ELEK -CIO 1EE D □ 0 1 D 4 3 ‘i Darlington Silicon NPN Power Transistors TO-220 Package a 7-33 -2f\ Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol TIPt10 T ip m TIP112

Contextual Info: PANASONIC INDL/ELEK -CIO 1EE D □ 0 1 D 4 3 ‘i Darlington Silicon NPN Power Transistors TO-220 Package a 7-33 -2f\ Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current

AM480272DTMQW-00H

Abstract: Ampire AM480272 480xrgbx272
Contextual Info: SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. APPROVED AM480272DTMQW-00H BY DATE † Approved For Specifications ; Approved For Specifications & Sample AMPIRE CO., LTD. Building D., 2F., No.88, Sec. 1, Sintai 5th Rd., Sijhih City,