2E1000 Search Results

Contextual Info: Issue 1.0'. October 1989 PUMA 2E1000 1 M e g a b i t C M O S E EP R O M P U M A PUMA 2E1000 ADVANCE PRODUCT INFORMATION 1,048,576 CMOS High Speed EEPROM Features Pin Definition User Configurable as 8,16, or 32 bit wide Fast Access Times of 100/120/150 nS Operating Power: max values-L Version

3d104

Contextual Info: 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000-70/90/12 Issue 4.4 : January 2001 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit High Speed EEPROM module user configurable as 32Kx32, 64Kx16 or 128Kx8. Features Very Fast access times of 70/90/120 ns.

2E1000

Contextual Info: 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000-70/90/12 HMP Ltd, West Chirton, North Shields, Tyne & Wear NE29 8SE England Tel. +44 191 293 0500 Fax. (+44) 191 259 0997 Issue 4.4 : January 2001 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit High Speed

Contextual Info: PU M A 2 E 1 000 molate PUMA 2E1000-90/12 Issue 2.0 : November 1992 S e m ic o n d u c to r Inc. PRELIMINARY 1,048,576 bit CMOS High Speed EEPROM Features User Configurable as 8 ,1 6 , or 32 bit wide. Very Fast access times of 90/12 ns. Operating Power 1760mW max 32 bit mode

Contextual Info: MOV 1.S 19« P U M A 2E 1O O O moîaïc PUMA 2E1000-90/12 Issue 2.0 : November 1992 S e m ic o n d u c to r In c. PRELIMINARY 1,048,576 bit CMOS High Speed EEPROM Features User Configurable as 8,16, or 32 bit wide. Very Fast access times of 90/12 ns. Operating Power 1760mW max 32 bit mode

Contextual Info: OEC 7 1992 PUMA 2E1000 molaic PUMA 2E1000-70 Issue 2.0 : November 1992 PRELIMINARY S e m ic o n d u c to r inc. 1,048,576 bit CMOS High Speed EEPROM Features User Configurable as 8,16, or 32 bit wide. Very Fast access time of 70 ns. Operating Power 1760mW max 32 bit mode

7420 pin configuration

Contextual Info: / 2^ ^ > mosaic 3 2 K x 3 2 E E P F t& M M O D U L E PUMA 2E1000-70/90/12/X405 semiconductor, inc. Issue 4.0 : June 1997 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000/X405 is a 1Mbit CMOS High Speed EEPROM organised as 32K x 32. This is available in a 66 pin PGA package

2E1000MB

Abstract: 2E1000 32KX8
Contextual Info: PUMA 2E1000 PUMA 2E1000-15/20/25 Issue 2.1 : February 1993 PRELIMINARY 1,048,576 bit CMOS High Speed EEPROM Pin Definition Features User Configurable as 8,16 or 32 bit wide. Fast access times of 150/200/250 ns. Operating Power 1600mW max 32 bit mode 830mW (max) 16 bit mode

D3157

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000 - 150/200/250 Issue 4.1 : May 2001 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit EEPROM module user configurable as 32Kx32,

Contextual Info: molate PUMA 2E1000 PU M A 2E1000*15/20/25 Issue 2.1 : February 1993 PRELIMINARY Sem iconductor Inc. 1,048,576 bit CMOS High Speed EEPROM Pin Definition Features User Configurable as 8,16 or 32 bit wide. Fast access times of 150/200/250 ns. Operating Power 1600mW max 32 bit mode

D3157

Abstract: 2E1000MB D2860 D1425 NE29
Contextual Info: 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000 - 150/200/250 Issue 4.0 : January 2000 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit EEPROM

2E1000MB

Abstract: D3157 d2364 65d1
Contextual Info: 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000 - 150/200/250 Issue 4.0 : January 2000 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 001 858 674 2233, Fax No: (001) 858 674 2230 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit EEPROM

Contextual Info: mosaic 32K x 32 EEPROM MODULE PUMA 2E1000-70/90/12 semiconductor, inc. 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 4.2 : N o vem b er 1998 Fax No: (619) 674 2230 Description 1,048,576 bit CMOS High Speed EEPROM

Contextual Info: molate PUMA 2E1000 PUMA 2E1000-70 Issue 2.0 : November 1992 S e m ic o n d u c to r Inc. PRELIMINARY 1,048,576 bit CMOS High Speed EEPROM Features User Configurable as 8,16, or 32 bit wide. Very Fast access time of 70 ns. Operating Power 1760mW max 32 bit mode

2E1000

Contextual Info: 32K x 32 EEPR OM MODULE EEPROM PUMA 2E1000-70/90/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Description 1,048,576 bit CMOS High Speed EEPROM The PUMA 2E1000 is a 1Mbit High Speed

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29EWL

Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F256m

Abstract: js28f256m29 JS28F512 256M29EWH
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers