2C26 Search Results

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

Contextual Info: MOTOROLA SC XSTRS/R F bBfc.7254 □ 0 ti2tì40; 1 « n O T b 4bE D 'T -2 L " 7 -O cl MOTOROLA SEMICONDUCTOR mm— mam TECHNICAL DATA 2C2605HV Chip PNP Silicon Low-Noise Amplifier Transistor DM0 lllllll Discrete Military Operation . . .designed for high-gain, low-noise amplifier applications.

Contextual Info: D a ta S h e e t N o. 2 C 2 6 0 5 Is L SEMICONDUCTORS Chip Type 2C2605 G e n e ric P a c k a g e d P arts: Geometry 0220 Polarity NPN 2N 26 0 4 , 2N 2 6 0 5 , 2N 3 7 9 8 , 2N 3 7 9 9 , 2 N 3 8 1 0, 2 N 3 8 1 1 1 8 M IL S - Chip type 2C2605 by Semicoa Semi­

2C2605HV

Abstract: raon
Contextual Info: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS

Contextual Info: 4 -U n it 400m A Transistor Array 2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a

Contextual Info: 2C2605HV Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.3 @I(C) (A) (Test Condition)10m

1200ap

Abstract: PCM1701P Burr-Brown 3400B pcm65p pcm1701 4203SQ mp8316 DAC800-CBI-V MPC8S 4203j
Contextual Info: Burr-Brown Corporation Discontinued Products August 2, 1999 Model 0025MK 0100AP 0100MS-1 0100MS-2 0100MS-3 0100MS-4 0145MC 01AA-A1030-00 01DSA00024A001 01DSA00080A001 01DSA00236A002 01DSA00236A010 01DSA01898A003 0211B 0245MC 0422MC 0501-3A 0503A 0506/16 0506/16A

ST-M40

Contextual Info: PH AST-12 Device Programmable, High-Performance ATM/Packet/Transmission SONET/SDH Terminator for Level 12 TXC-06112 DATA SHEET PRELIMINARY DESCRIPTION Integrated clock recovery and synthesis fo r four O C -3c/STM -1 sig n a ls or one O C -1 2 /O C -1 2 c/

ad90747

Abstract: dwa 105 dwa 108 transistor EBC 3904 nte semiconductor replacement guide ADSP-BF535 AMS 1117 transistor Linear Applications Handbook National Semiconductor INFRARED laser ba 3906 electronic component
Contextual Info: ADSP-BF535 Blackfin Processor Hardware Reference Revision 3.0, June 2004 Part Number 82-000410-13 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2004 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

Contextual Info: AT&T Data Sheet October 1995 Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 |im technology (four-input look-up table delay less than 3.6 ns)

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

SFH 903

Abstract: 386d lcd power board schematic APS 252 H103A TCS 3414 SFH 291 386D pin configuration C5011-11 4312-020-36643 PAL 010a
Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DATA SHEET LINE SIDE Serial LIU Clocks The PHAST-12E is a highly integrated SONET/SDH terminator device designed for ATM cell, frame, higher order multiplexing,

AmSYS29

Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
Contextual Info: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;

PT15D

Abstract: OR2T40A-6PS208I R4C18
Contextual Info: Data Sheet August 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology

PIR 203B

Abstract: 4312 020 36643 lcd power board schematic hp 1502 lcd power board schematic APS 254 TCS 3414 MOTOROLA SOC 124A lcd power board schematic APS 252 ISO13239 h19 0549 9 ADM 3053
Contextual Info: PHAST-12 Device Programmable, High-Performance ATM/Packet/Transmission SONET/SDH Terminator for Level 12 TXC-06112 DATA SHEET PRELIMINARY DESCRIPTION FEATURES • Integrated clock recovery and synthesis for four OC-3c/STM-1 signals or one OC-12/OC-12c/ STM-4/STM-4c signal

lucent 497aa

Abstract: PT12B PT18C PT15D la 4508 ic schematic diagram pt8c PR12D pr19a ATT2C26 sj 2206 b
Contextual Info: Lucent Technologies Bell Labs Innovations Optimized Reconfigurable Cell Array ORCA ATT2Cxx Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 urn technology (four-input look-up table delay less than 3.6 ns)

LINDNER fuses

Abstract: 500765 lindner IEC 60947-3 ac-22b switch disconnector fuse 250A 690V nh00gg50v125 NT NH LINDNER fuses P218766 1b769 C2237
Contextual Info: 38103-FER NH-fuses A4-engl 22.10.2003 15:50 Uhr Seite 3 NH-Fuse system Low voltage 38103-FER NH-fuses A4-engl 22.10.2003 14:01 Uhr Seite 2 NH-fuses Utilization Categories The utilization category is marked by two letters. The first letter indicates the breaking-capacity range, and the

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Contextual Info: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology

Contextual Info: Data Sheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Field-Programmable Gate Arrays Features • Flip-flop/latch options to allow programmable prior­ ity of synchronous set/reset vs. clock enable

EXO 32K

Abstract: OR2C06A OR2C12A OR2T15B OR2T40B
Contextual Info: Data Sheet November 2006 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology

FA2-6/1BEK

Abstract: D7552 Af572
Contextual Info: 123456789AB6CDC6E7C3F1 11 1 1 234567189AB4CDABE1FCBB9EB119AC66BC1 1 98 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 2 +,FD6C7256CB6 2 -F2F7BC6A2(BB7A62 8!&2 -A7CBD427B7C5A2./02B71(7A426F22+322 4B71(7A425667BA26F2B7(7260 27855FA2

PT15D

Abstract: 8C14 M31 mkv decoder chip diagram D172C ptoc5 Lucent 2623
Contextual Info: Data Sheet January 1998 microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR2CXXA 5.0 V and OR2TxxA (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 |xm/0.3 |xm CMOS technology, with a migration