2SJ76 Search Results

2SK213 2Sk214

Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance

DIODE OA10

Abstract: oa10 diode
Contextual Info: bl E D • M ateos 001301b 3T3 IHIT4 2SK213,2SK214. 2SK215,2SK216 H I T A C H I / O P T O E L E C T R O N I C S SILICON N-CHANNEL MOS FET HIGH FREQUENCY ANO LOW FREQUENCY POWER AMPLIFIER. HIGH SPEED SW ITCHING Ed Complementary Pair with 2SJ76, J77, J 7 8 r

Contextual Info: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SJ76

Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting

2SK216-E

Abstract: 2SK215 2SK216 2SK213 2SK214 2SJ76 PRSS0004AC-A 2SK214-E 2SK213-e 2SK216E
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 Previous: ADE-208-1241 Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features

REJ03G0122-0200

Abstract: 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 Previous: ADE-208-1179 Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

Contextual Info: 2SJ76 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)140 V(BR)GSS (V)15 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.7‚ Minimum Operating Temp (øC)

2SJ76

Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

hitachi j79

Abstract: 2SK216 2SK215 j78 transistor 2SJ76 2SK213 2SK214 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

2SK213 2Sk214

Abstract: j78 transistor 2SK214 2sk216 equivalent tower mounting amplifier 2SK213 2SK215 2SK216 2SJ76 Hitachi 2SJ
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

Hitachi 2SJ

Abstract: HITACHI 2SJ* TO-3
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

PCH-1

Abstract: 2SJ76 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 2SK216 Hitachi 2SJ
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance

2SJ76

Abstract: 2SK216 diode sy 171 2SJ130 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215
Contextual Info: HITACHI 2SJ76,2SJ77, 2SJ78,2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY POWER AMPLIFIER, 4& HIGH SPEED POWER SWITCHING 1.5 M a y j C o m ple m e n ta ry Pair w ith 2SK213, 2SK214, 2SK215, 2SK216 • FEATURES • S u ita b le fo r D ire c t M o u n tin g .

2SJ77

Abstract: 2sj79
Contextual Info: 2SJ76,2SJ77,2SJ78,2SJ79 Silicon P-Channel MOS FET HITACHI Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance

2SJ76

Abstract: 2SJ78 P-Channel Enhancement FET 2SJ77 2SJ79 2SK213 2SK214 2SK215 2SK216 Hitachi 2SJ
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 Z 1st. Edition Mar. 2001 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • •

hitachi j79

Abstract: Hitachi 2SJ Hitachi DSA002781
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

hitachi j79

Abstract: 2SK216 2SK213 2Sk214 2SK214 J78 FET 2SK213 2SK2163 Hitachi 2SJ Hitachi DSA00279 2sk2164
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

Hitachi 2SJ

Abstract: Hitachi DSA002780 2sj77
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance

2sj78

Abstract: 2SJ79 2SJ77 2SJ76 PCH-1 2SK213 2SK214 2SK215 2SK216 Hitachi 2SJ
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance

2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Contextual Info: Index P-Channel 2SJ Series 2SJ76. 149 2SJ77. 149

J78 FET

Abstract: 2SK216 2SK213 2SK214 Hitachi 2SJ 2sk215
Contextual Info: 2SK213,2SK214,2SK215,2SK216 Silicon N-Channel MOS FET HITACHI Application H igh frequency and low frequency pow er am plifier, high speed sw itching. C om plem entary pair w ith 2SJ76, J77, J78, J79 Features • Suitable for direct m ounting • H igh forw ard transfer adm ittance

2SJ76

Abstract: 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 2SK216 Hitachi 2SJ
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SJ72

Abstract: 2SJ82 2SJ99 2SJ96 2SJ83 2SJ92 2SJ73 2SJ90 2SK146 2SJ102
Contextual Info: - 16 - s ít m £ m m ìà f t 2SJ70 B aL H aL 2SJ72 V * ft * (V) s , fë I* ft K 2SJ69 £ 1 V* (A) X P d /P c h 7* * (W) Ig s s (max) (A) Vg s (V) (min) (A) 551 M (max) V d s (A) (V) (Ta“25°C) tí «S (min) (max) V d s (V) (V) (V) Id (A) LF LN A

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m