2SD1918 Search Results

2SD1918

Abstract: 80MHZ
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage. BVCEO = 160V +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

2SD1918

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1

D1918

Contextual Info: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V

B1275

Contextual Info: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)

2SB1275

Abstract: 2SB1236A 2SD1918
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.

2SB1275

Abstract: 2SD1857A 2SD1918 2SD2211 T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD191812SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.

transistor 2SB 367

Abstract: Power Transistors SIT sit transistor
Contextual Info: 2SD2211/2SD1918F5 b ÿ > ' y X £ /Transistors 2 S D 2 2 1 1 I f c E C 2 5 U l 9 1 O r 5 f ^ 4 r y 7 / ^ l / - ^ N P N b ? > y Z $ Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions Unit : mm 1) i o i i l l i J £ T '^ 5 o

2SD2211

Abstract: 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.

Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)

2SD1918F5

Abstract: 2SD2211 2SD1918 FRI02 2SB1275 T100 Z100 k50z
Contextual Info: 2SD2211/2SD1918F5 h 7 > v 7>£ /Transistors 2 S D 2 2 1 1 Z 5 D 1 yV3 > Epitaxial Planar NPN Silicon Transistor i£JiilàjÆ ^ i£fiffl/L o w Freq. Power Amp. I f c f * * '> 7 ^ 7 l/- * fê N P N o c e O r O • i'HIN'& ISI/Dim ensions Unit : mm • 45*

2SB1275

Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

2SD2211

Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.

TO 252 dimensions

Abstract: TO-252 2sb1181 2sc5001
Contextual Info: 10W & 15W D PAK BIPOLAR TRANSISTORS NPN 10W AND 15 W POWER TRANSISTORS TO-252 • • • • • Tamb: 25˚C VCEO IC IC pulse Type V max A max A DRIVER 2SD1760 50 3 4.5 2SD1758 32 2 2.5 2SD1733 80 1 2 2SD1918 160 1.5 3 LOW VCE SAT 2SC5001 20 10 15 2SC5103

Q2SD1918

Abstract: 2SD1918 Model 450
Contextual Info: SPICE PARAMETER 2SD1918 by ROHM TR Div. * 2SD1918 NPN BJT model * Date: 2006/11/20 .MODEL 2SD1918 NPN + IS=450.00E-15 + BF=101.86 + VAF=9.5235 + IKF=2.0711 + ISE=450.00E-15 + NE=1.4191 + BR=22.448 + VAR=100 + IKR=.96913 + ISC=31.986E-12 + NC=1.3523 + NK=.68874

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1

2SD1763A

Abstract: 2sd2400a 2SB1186A 2SB1275 2SB1236A 2SB1569A 2SD1857A 2SD1918 2SD2211 2SB1569
Contextual Info: Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A 96-612-A58 (96-744-C58) 277

2SA1690

Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
Contextual Info: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427

2SD2211

Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200
Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1

2SB1275

Abstract: 2SD1918 2SB127 160V2 2SB1236A 2SD1857A 50MHZ
Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

2SB1236A

Abstract: 2SB1275 2SD1857A 2SD1918 2SD2211 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.