2SD1758 Search Results

npn smd 2a

Abstract: 2a smd 2SD1758
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max

Contextual Info: Transistors SMD Type Product specification 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max

2SD1758

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-251 TO-252-2L FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

TO-252-2

Abstract: TO252-2 2SD1758
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR（PNP） 1.BASE FEATURES Power dissipation PCM: 2W （Tamb=25℃） Collector current ICM: 2A Collector-base voltage V BR CBO: 40V Operating and storage junction temperature range

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

TO-252-2

Abstract: 2SD1758 TO252-2
Contextual Info: Transys Electronics L I M I T E D TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO:

d1758

Abstract: Transistor d1758 transistor F5 2SD1758F5 2SD1758 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package package marking: D1758*t), where ★ is hFE code and □ is lot number general purpose transistor with ratings as follows: — 2SD1758F5 (CPT F5) o 5.1 1' • X

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-252 1.BASE FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1

1AM5

Abstract: 2SB1240 2SB1182 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor

2SD1758

Contextual Info: 2SD1758 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V

Contextual Info: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor

Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1182

Abstract: 2SB1240 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1182

Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
Contextual Info: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1

2SD1758

Abstract: b1182
Contextual Info: h "7 > V 7, £ / I ransistors 2SD1758 2SD 1758 1 V c e O = 3 2 V , '> • ; = ! > Ic M a x = 2 A , PC M ax=10W h 7 > y '7 Epitaxial Planar NPN Silicon Transistors Freq. Power Amp. ? 3 -o jî 0.6±0,1 -f 7 'T < fc -5 „ 2) 2 S B 118 2 0.9 • Features 0 . 75

Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

Contextual Info: 2SD1758 Plastic-Encapsulate Transistors PNP TO-252-2 Features Power dissipation PCM: 2 W Tamb=25℃ Collector current ICM: 2 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 1. BASE 2. COLLECTOR 3. EMITTER TJ, Tstg: -55℃ to +150℃

2SB1182F5

Abstract: OTR-2500 2SD1758F5 ILI 2302
Contextual Info: 2SD1758F5 h ~7> 's X $ /'Transistors w W r w E p ita x ia l P la n a r N P N f é jiìM • • $ 5 1 V c e o = 3 2 V , S ilic o n ^ J iS f lf fl/L o w T r a n s is to r F re q . P o w e r A m p . rf^ H / D im e n s io n s Unit : mm) Ic m a x = 2 A , Pc m a x = 1 0W0)>/Lffl* -T Zf 7 ' *

TO 252 dimensions

Abstract: TO-252 2sb1181 2sc5001
Contextual Info: 10W & 15W D PAK BIPOLAR TRANSISTORS NPN 10W AND 15 W POWER TRANSISTORS TO-252 • • • • • Tamb: 25˚C VCEO IC IC pulse Type V max A max A DRIVER 2SD1760 50 3 4.5 2SD1758 32 2 2.5 2SD1733 80 1 2 2SD1918 160 1.5 3 LOW VCE SAT 2SC5001 20 10 15 2SC5103