2SD1562 Search Results

2SB1085

Abstract: 2SD1562
Contextual Info: Inchange Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

D1562A

Abstract: 1562A d1562
Contextual Info: K ~7 > V 7 s$ /Transistors 2SD1562A 2§D1562A Epitaxial Ik0^'>Planar 77;U 7° lNPN '_:^Silicon NPNTransistor fé ü > J fc ti^ iilliffl/L o w Freq. Power Amp. • W ß 't f ä s / Dimensions Unit : mm 1) ¡ S R /E T BVCEO=160V 4> 3 . 6 ± 0 . Z 3) 10.0 ± 0 . 3

2SB1085A

Abstract: 2SD1562A
Contextual Info: JMnic Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

2SD1165A

Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,

Contextual Info: F ~7 > V 7 s / I ransistors 2SD1562A 2SD1562A NPN y ' J 3 > h 7 > y * $ Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor 1 IB ffT S 5 B V Ce o = 1 6 0 V ) o 2) ASCW/a I ' o 3} tT ^F r^j^ , 4) 2S B 1085A t 3 > 7 ' J f * 5 o • Features 1) High breakdown voltage:

2SB1085

Abstract: 2SD1562
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1562 APPLICATIONS ·Designed for low frequency power amplifier applications.

nec 2sd381

Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A

2SD1562

Abstract: 2SD1562A 2sb1085
Contextual Info: Inchange Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB1085/1085A ・High transition frequency APPLICATIONS ・For low freuqency power amplifier applications

2SB1085A

Abstract: 2SD1562A
Contextual Info: Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1085

Abstract: 2SD1562
Contextual Info: JMnic Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN

Contextual Info: ROHM CO LTD MQE D • & ■R H tl 7826=1=1=1 Q Q O S a T ? N 7 > s/ 7 s £ /T ra n s is to rs . . ■ — , ■■■, 2SD1562 , 2 S D 1 5 S 2 t ~33- o 9 I t 0^ ^ y 7 ^ 7 V - ^ N P N Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • w* Dimensions Unit: mm

Contextual Info: ROHM CO 40E LTD T B S a m J> DDDSIOG M ERHM 2SD1562A h 7 > y ^ ^ / T ransistors - :-T 23 3 - O 2SD1562Â cj 2 L \ £ $ * V 7 t f \ s - H & NPN V lJ - 1 > k 7 > V * $ i & Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor

2SB1085

Abstract: 2SD1562
Contextual Info: SavantIC Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1562 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Contextual Info: h 7 > y ^ $ / T ransistors 2 3 1 1 5 0 9 2SD1562 I t 0^ = 5 r V 7 ^ 7 V - ^ NPN y 'J = l> V y > v * $ 1SJRl>Jt ^3i^ll iff l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • 1) Dimensions U n it: mm) VJ-^J V: V vJ i t • <HS£ ® K 1 ± T & 5 (BV Ceo = 120V)o

2SD1562

Contextual Info: h 7 > V X £ / T ransistors 2SD1562 1 r a j f r t f f i ? ' i> 5 2SD1562 NPN '>'J h Epitaxial Planar NPN Silicon Transistor -i&Jü$1I:frii |liiffl/L o w Freq. Power Amp. o 4.5 £ 0 . 2 B VC EO =120V ¿3.6 + 0 2 i f ia < , C J f, 2) S O A A ' ' j £ t ' 0

2SB1085A

Abstract: 2SD1562A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1562A ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1562

Abstract: 2SD1562A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications PINNING

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

2sc2460b

Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
Contextual Info: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA

2SD410a

Abstract: 2SD650 2SD319 2SD524 2SD533 el 431 2SC1669 2SD473 2SD1765 NEC 426
Contextual Info: 214 - m m en m JIC m h SANYO 2SD1459 2SD1459 m ni m tt € s « Type No. Manuf. 2SD 394 h m. 2SD 395 H * 2SD 396 S ÍL 2SD 400 « H 2SD 401 , 2SD 402 » B S 2SD 404 S S 2SD 405 B S 2SD 406 B S 2SD 407 , OU 95 i0u sito«-' « 2SD 409 ' b m 2SD 410 a n 2SD 411 2SD 412 ^

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)