2SC5065 Search Results

2SC5065

Abstract: 150-1 MARKING toshiba 133
Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

ET 2314

Contextual Info: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)

Contextual Info: T O SH IB A 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC506 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2801 j25

Abstract: 2SC5065
Contextual Info: 2SC5065 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5065 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

toshiba 1107

Abstract: 2SC5065
Contextual Info: TO SH IBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5065 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S2lel2= 12dB f=lGHz 2.1 ¿ 0.1 1.25Ì0.1 ^ -4 in 1 o in VO 2 o

Contextual Info: TOSHIBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q65 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF - l.ld B , |S2iel2= 12dB f=lG H z Unit in mm 2.1 ± 0.1 1 .2 5 ± 0 .1 - MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: Reliability Tests Report Product Name: 2SC5065 Package Name: USM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC5065

Contextual Info: TOSHIBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5065 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 12dB f=lG H z Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5065

Contextual Info: TOSHIBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5065 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2= 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5065

Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5065

Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Contextual Info: Si GEC PLESSEY ADVANCE INFORMATION S E M I C O N D U C T O R S SL6610 DIRECT CONVERSION FSK DATA RECEIVER Supersedes the October 1994 edition, DS4003 - 1.4 This device is an advanced direct conversion receiver for operation upto470MHz. The design is based on the SL6609A

Contextual Info: w . G FC PTFSSFY u liV > S E M I . O M I JULY 1995 PRELIMINARY INFORMATION C I (* K S D.S. 3653 2.3 SL6619 DIRECT CONVERSION FSK DATA RECEIVER The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates

gyrator

Abstract: Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 SL6619 vcxo philips
Contextual Info: AN4399 Advice on using the SL6619 Application Note AN4399 ISSUE 1.6 April 1996 INTRODUCTION This application note outlines a basic circuit for the SL6619 Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. An Evaluation Board based on 282MHz will be described and detailed setup procedure provided.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

s b 8748

Abstract: HA1111
Contextual Info: SL6609A MITEL Direct Conversion FSK Data Receiver SE M IC O N D U C T O R Advance Information D S 4 0 1 5 - 2 .5 This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609 receiver and is a pin for pin product upgrade. The device

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

M1686-A

Abstract: irf 640 audio amplifier irf 3803 DS4015 N2261-A capacitor 2u2 SL6609 vr 4k7 2SC5065 BFT25A
Contextual Info: SL6609A Direct Conversion FSK Data Receiver Advance Information DS4015 - 2.5 July 1995 This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609 receiver and is a pin for pin product upgrade. The device

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8