2SC4675
Abstract: YJ1000 EN3708 EN 3708
Contextual Info: Ordering number: EN 3708 2SC4675 No.3708 NPN Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications Features • Adoption of MBIT process. • Low saturation voltage. • F ast switching speed. • Large current capacity. A b so lu te M axim um R a tin g s a t T a = 25°C
|
OCR Scan
|
2sc4675500ma00w17yj1000+2en3708en 3708
|
PDF
|
FR 3708
Abstract: 2SC4675
Contextual Info: O rd e rin g n u m b e r :EN 3 7 0 8 2SC4675 No.3708 NPN Epitaxial Planar Silicon Transistor I High-Current Switching Applications F eatures • Adoption of MB IT process. •Low saturation voltage. • Fast switching speed. • Large current capacity. unit
|
OCR Scan
|
fr 37082sc4675 |
PDF
|
EN3708
Abstract: 2SC4675
Contextual Info: Ordering number:EN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. unit:mm 2042B [2SC4675]
|
Original
|
en37082sc46752042bo-126ml |
PDF
|
2SC4675
Abstract: ITR07418 ITR07419
Contextual Info: Ordering number:ENN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT process. · Low saturation voltage. · High-speed switching. · Large current capacity. unit:mm 2042B [2SC4675]
|
Original
|
enn37082sc46752042bo-126ml+2itr07418itr07419
|
PDF
|
2SB1205
Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.
|
OCR Scan
|
2sb764/2sd8632sb892/2sd12072sb927/2sd12472sb985/2sd1347+92sb11312sd11452sa1641/2sc43062sb1201/2sd18012sb1202/2sd18022sb1203/2sd18032sb12052sb11432sc4675
|
PDF
|
transistor 2SB1142
Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Contextual Info: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated
|
OCR Scan
|
0-126mt0-126mlo-126mt950123tr+6transistor 2sb1142sanyo transistor tt series2sb612k2sb11432sa17502sc3788
|
PDF
|
2SB1267
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF
|
OCR Scan
|
2sc47272sc47282sc47292sd1235+5t02202sdi236l2sd1237l2sa14692sb1267
|
PDF
|
2SB1205
Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.
|
OCR Scan
|
t0-126lpmt95c123tr2sb12052sd1801 |
PDF
|
2SB1205
Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
|
OCR Scan
|
tq220mlt0220mlt03pb2sb1205+32s811192sk2222sa128
|
PDF
|
2sc5694
Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP
|
Original
|
o-126o-126mlo-126lp2sb1165+142sd17222sb11662sd17232sb11672sc5694to-126lp2sd16832sc56072sa17702sa20232sa2203sanyo, 2sa20392sa20392sc5707
|
PDF
|
2SC4614
Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
Contextual Info: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b
|
OCR Scan
|
2sc46262sc46272sc46282sc4629+92sc46302sc46312sc46322sc46332sc46502sc46552sc46142sc46362sc4642
|
PDF
|
2SB612K
Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Contextual Info: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]
|
OCR Scan
|
t0-126mlo-1262sd8262sb559+122sd4392sb632k2sb612k2sb9862sd13482sa13802sc35032sc4675transistor to-126 outline dimensions2sa12492sa1507 sanyo semiconductor2sc3417
|
PDF
|
2SB1267
Contextual Info: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te
|
OCR Scan
|
2sb986t01262sd13482sb1141+5t0126ml2sd1236lt02202sb921l2sb1267
|
PDF
|