2SC373 Search Results

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

2SC3739

Abstract: 2SA1464 marking 1BW 1BW MARKING 1bws
Contextual Info: SEC j m ^ T i x t n '> 1J =3 > Silicon T ran sisto r A 2SC3739 NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^/FEATUR ES ^ 0 / P A C K A G E DIMENSIONS Unit : mm O f f iJ U ? Æ (i b t i > ), • A 'i "/ - f > 7 , Í & J S ?£ W M t£ ¿ " ) i i & H 4 - 0

Contextual Info: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3739 SOT-23-3L TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage

Contextual Info: Power Transistors 2SC3738 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching For horizontal deflection output Unit: mm 4.0 Ratings Unit Collector to base voltage VCBO 1200 V Collector to emitter voltage VCEO 800 V Emitter to base voltage

2SC3734LT1

Abstract: na 50
Contextual Info: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

cm 2000 mk II

Abstract: d1352 2SC3731
Contextual Info: Silicon T ran sistor 2SC3731 N n P N X ¡ ¿ f l F 'ì s ' T J U U 3 > h v > ï> * 9 # i j £ • mm O X ^ o ? - y f- > r i i æ ^ Ü ^ o 4.0 ±0.2 u ? O z i] / ? t 'o O 2SA 1458Ì = |> 7 °U y > 9 Ut f l f ë ! . . 5 i t . 0.45 (T M a = 25 °C ) «&

Marking B12

Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
Contextual Info: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC3731 The 2SC3731 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. FEATURES • in millimeters inches 4 .2 MAX. (0.165 MAX.) High Frequency Current Gain. 2.2 MAX.

lkt 108

Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS

2SC373

Abstract: 2SC734 2SC1330 2SC923 2SC1000 2SC400 TO-92B 2SC1327 2SC735 2sc539
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS H,'E Ic VcEO mW (mA) (V) min mas VcE (mA) (V) C* N.F. fx max lc mm max mas (V) (mA) (MHz) (MHz) (dB) 2SC316 2SC372 2SC373 2SC380 2SC400 N N N N N TO-18 TO-92B TO-92B TO-92B

2SC3739

Abstract: marking Y12
Contextual Info: MCC 2SA1464
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO

Contextual Info: 2SA1464 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage

ge330

Contextual Info: SILICON TRANSISTOR 2SC3739 HIGH FREQUENCY AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim e te rs • High G ain B a ndw idth P rodu ct: f-f- = 200 M H z M IN . • C om plem entary to 2S A 1464

B34 transistor

Abstract: 2SC3735 2SA1462 b35 sc-59 marking b34
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC3735 NPNエピタキシアル形シリコン・トランジスタ 高速度スイッチング用 特 外形図（単位：mm） 徴 ○スイッチング速度が速い。 2.8±0.2

Contextual Info: 2SC3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m

Contextual Info: 2SC3732M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)

Contextual Info: 2SC3734 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

2SC3736

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45

75150 PC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings

JT MARKING

Abstract: 2SA1462 2SC3735
Contextual Info: SEC j i v r x 'J =3 > 7. ? h Silicon T ra n sisto r A 2SC3735 N P N Silicon Epitaxial T ra n sisto r H igh Sp e e d Sw itch in g ¡tfS/FEA TU R ES ^ 0 /P A C K A G E D IM E N S IO N S Unit : mm o 7 n { 7 -f- y 2 . 8 + 0 .2 o Ji'. O a u 7 O 2S A 1462 t 9 > 9 'J

2SC3737

Contextual Info: Power T ransistors 2SC37371 2SC3737 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Speed Switching Horizontal Deflection Output U nit mm’ 5.2max. 15.5max. 6.9min. ■ Features 3'.2‘ -ip • High speed switching 1 • Wide area of safety operation and high breakdown voltage

2SC3734

Abstract: odv marking
Contextual Info: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m