2SC3660
Abstract: rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:
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2sc3660g000d31rf amplifier 100wlinear amplifier 470-860+2transistor npn 100w amplifiertransistor 246
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transistor npn 100w amplifier
Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:
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2sc3660g000d31transistor npn 100w amplifierrf power amplifier 100w+3470-860rf amplifier 100wnpn 28v 100w amplifier
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nec 2501
Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA
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2sc24732sc24742sc24752sc2476+162sc24772sc24802sc24512sc24822sd24832sc2484nec 2501nec 2502nec 2505nec 2504nec 25062482 h2sc1555nec 25082sc36602sc2534
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2sc12572sc12582sc12592sc1605a+152sc17292sc18042sc18052sc19462sc1946a2sc19672sc6362sc635mhw820-1tp30082sc2897sd14772sc2652tp3034sd1470
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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2SC3660A
Abstract: 2SC3660
Contextual Info: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR NEM060C69-28 NEM080C69-28 NEM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENCY vs. FREQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)
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nem080c69-28nem060c69-28l4e75e50qt57fib+22sc3660a2sc3660
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2SC3660
Abstract: 2sc3153 2SC4008 2sc3052 2sc3211 2SC3714 2SC1627 3692 nec 2sc3694 nec 2SD1941
Contextual Info: 17 0 - % tt J = ft SANYO 2SC3153 2SC3153 2SC4123 2SC4123 2SC4124 2SC4125 JK TOSHIBA 2SC3657 m, NEC 2SC3535 2SC3536 a il HITACHI 2SC3322 IH 3686 / 3687J 3688 / 3689 J 3690 3691 / 3692 ^ 3693 ^ 3694 / 3695 3696 ✓ 3697 3701 3702 3704 3705 / 3707 3708 / 3709 ✓
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2sc31532sc36572sc35352sc3322+132sc32112sc35362sc32122sc41232sd17312sc36602sc40082sc30522sc37142sc16273692 nec2sc3694 nec2sd1941
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2T3130A9
Abstract: HEP310 kp303g kt117 HEP-310 kt117b kt117a KT117G kt816g kt3102e
Contextual Info: Tranzistory -Speciální KT117AM KT117BM KT117G KT117GM KT117VM 2N1923 2N739 BSV56C, HEP310 2N844 2N1573 Øízené polem 2P934A KP302A KP302A KP302B KP303B KP303G KP303V KP305A KP307Ž KP333A KP333B KP402A KP909A,B,V KP922A KP922A1 KP935G KP960A, B, V
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kt117amkt117bmkt117gkt117gm+14kt117vm2n19232n739bsv56chep3102n8442t3130a9kp303gkt117hep-310kt117bkt117akt816gkt3102e
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2SC3660A
Abstract: 2SC3660 2SC3654 2SC3629 2SC3631 2SC3631-Z 2SC3632 2SC3632-Z 2SC3636 2SC3637
Contextual Info: - 166 - Ta=25cC, *EP(áTc=25°C m « a 2SC3629 35 s Ä HF PA VcBO VcEO Ic(DO Pc Pc* I c BO (V) (V) (A) (W) (W) <*A> 20 1 % S /\IU 1• \hF 'UB (V) 5 200 4# 14 (Ta=25t;) E \i* a a / U*s\ Ic / I e "(V)' (A) (V) [lEPtttypffi] (V) Ic (A) Ib (A) ZSC3631 a m H V HS PSf
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2sc36292sc36312sc3631-z2sc3632+92sc3632-z2sc36362sc36372sc363810k/10k2sa14232sc3660a2sc36602sc3654
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2SC635
Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2sc12572sc12582sc12592sc1605a+152sc17292sc18042sc18052sc19462sc1946a2sc19672sc635mhw820-12sc636tp3008sd1393tp3034sd14702sc2897tp5051
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2SC3660
Abstract: 2SC3660A NEM060
Contextual Info: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR N EM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENC Y vs. F REQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)
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nem080c69-28nem060c69-28em080c69-282sc3660+22sc3660anem060
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