2SC3496 Search Results

2SC3496

Abstract: 2SC3496A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 6.0±0.2 1.0±0.1 2SC3496 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V

2SC3496

Abstract: 2SC3496A
Contextual Info: Power Transistors 2SC3496, 2SC3496A 2SC3496, 2SC3496A Silicon PNP Triple-Diffused Planar Type Power Switching • Package Dimensions . . ■ Features ' • High speed switching ■ • High collector-base voltage V c bo • Good linearity of DC cu rren t gain (hFE)

Contextual Info: Power T ransistors 2SC3496, 2SC3496A 2SC3496, 2SC3496A Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Switching U nit ! I • Features • High speed switching 8.7 max. • High collector-base voltage 6.5max. V cb o • Good linearity of DC cu rre n t gain

Contextual Info: 2SC3496 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)200m

2SC3496A

Contextual Info: Transistors SMD Type NPN Silicon Triple Diffused Transistor 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE

2SC3496

Abstract: 2SC3496A 1SC34
Contextual Info: ower Transistors 2SC3496, 2SC3496A ISC3496, 2SC3496A iliçon PNP Triple-Diffused Planar Type Package Dimensions p er Switching U n it : Features High speed switching 8 .7 m ax. High collecto r-b ase v o lta g e V cbo 6 .5 m ax. fjood linearity of DC current gain

2SC3496

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V 2SC3496 1 000 2SC3496A

2SC3496

Abstract: 2SC3496A
Contextual Info: Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage Emitter open Rating Unit VCBO 900 V 2SC3496 2SC3496A 1 000 900 VCES V Collector-emitter voltage 2SC3496 (Base open)

Contextual Info: Transistors SMD Type Product specification 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Toshiba 355-1

Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Contextual Info: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

2SD636

Abstract: SN1402 RT1N141C DTC124ES DTC114ES UN4211 DTC114EK RT1N441S DTC144ES 2SC2456
Contextual Info: - 162 - s « Type No. a « Manuf. = 3 SANYO 5 TOSHIBA m. NEC B H HITACHI S f FUJITSU i & T MATSUSHITA £ m MITSUBISHI □ — A ROHM 2SC 3398 = Ì* SN1402 UN2211 RT1N141C DTC114EK 2SC 3399 ^ h m RN1204 UN4213 RT1N441S DTC144ES H if RN1203 UN4212 RT1N241S DTC124ES

2SC3170

Abstract: 2sc3904 NEC 2SC3358 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3356
Contextual Info: - m s T ype No. a € Manuf. 0 a 0 a 0 a a a 0 a 2SC 3571 J 2 SC 3572 2SC 3573 2 SC 3574 2 SC 3575 2SC 3576 . = & 2 SC 3577 E T 2 SC 3 578 il B = SANYO TOSHIBA ffi NEC ÌZ HITACHI i i FUJITSU «J T MATSUSHiTA 2SC3039 ¡!M,3i II] 2SC4162 2SC3170 2SC4161 2SC3353

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

ir 4606

Abstract: 4606 2SC4621 4604 2SD2365 2sc4611 2SD1347 4614 2SC3672 2SC3688
Contextual Info: - S! € Type No. 2SC 4589 / 2SC 4591 2SC 4592 2SC 4593 2SC 4594 2SC 4595 2SC 4596 2SC 4597 ^ 2SC 4598 2SC 4599 2SC 4600 2SC 4601 2SC 4602 2SC 4603 2SC 4604 ^ 2SC 4605 2SC 4606 2SC 4607 2SC 4608 2SC 4609 2SC 4610 2SC 4611 2SC 4612 2SC 4613 2SC 4614 2SC 4615 /