2SC2073 Search Results

transistor 2SA

Abstract: 2SA940 AC550 2sa 940 2SC2073
Contextual Info: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073

A940A

Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA940

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2073 Features • • • • • • Halogen free available upon request by adding suffix "-HF" Wide safe Operating Area.

2SA940A

Abstract: 2SC2073A
Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 10 ± 0.3 03.2 ± 0.2 I- "L - • 2.7± 0.2 Complementary to 2SC2073A

2SA940

Abstract: 2SC2073
Contextual Info: JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA940

Abstract: Z10A1 2sc2073
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2sa940 2sc2073

Abstract: 2SA940
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm POVER A M P L I F I E R A P P L IC A T IO N S . VE R TIC A L A P P L IC A T IO N S . O U T PU T j a 3 M A X . 0 1 .tS zO .ll c r f ir i FEATURES: «Ô . Complementary to 2SC2073 i_ i . 5 MAX . MAXIMUM RATINGS (Ta=25°C)

2SC2073

Abstract: 2sc2073 amplifier transistor 2sc2073 2SA940
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA940

Abstract: 2SA940 equivalent 2SC2073
Contextual Info: PNP 2SA940 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complementary to 2SC2073 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SA940

Abstract: 2SC2073 2SA94 PEC 120V
Contextual Info: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

2SC2073

Abstract: 2SA940
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2073

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage

Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING

2SC2073

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector

2SC2073

Abstract: transistor 2sc2073
Contextual Info: 2SC2073 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — — 1 2 3 Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Paramenter Value Units

A940A

Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC2073 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)500m

2SA940

Abstract: 2SA940 equivalent 2SC2073
Contextual Info: SavantIC Semiconductor Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A St. DE J TOTTaSO Q0074t.ñ S 5óC 0 7 4 6 8 D IS C R E T E /O P T O 0 r-3 3 -0 ? 2SC2073 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) Unit in mm PCWER A M P LIF IE R APPLICATIO NS. 1Q3M AX. V E R TIC A L OUTPUT APPLICATIO NS.

2SA940

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SA940 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940 Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS ^ 3.6 ± 0.2 10.3MAX iT * 7 U .C • • Complementary to 2SC2073 M AXIM UM RATINGS (Ta = 25°C)

2SA1011

Abstract: 2SC2073
Contextual Info: 2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC2073 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SA940

Abstract: 2SA940 equivalent 2SC2073
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier ,