2SB77 Search Results

2sb778

Abstract: 2SD998
Contextual Info: JMnic Product Specification 2SB778 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PML package ・Complement to type 2SD998 APPLICATIONS ・High power amplifier applications ・Recommended for 45~50W audio frequency amplifier output stage PINNING PIN

2SB776

Abstract: 2SD896
Contextual Info: JMnic Product Specification 2SB776 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD896 ・Wide area of safe operation APPLICATIONS ・100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB775

Abstract: 2SD895
Contextual Info: O rdering num ber: EN 679F 2SB775/2SD895 N0.679F 2SB775: PN P E pitaxial P lanar Silicon Transistor 2SD 895: NPN Triple Diffused P lan ar Silicon Transistor 85V/6A, AF 35W Output Applications F e a tu re s •Wide ASO because of on-chip ballast resistance.

AA3R

Abstract: 2SB772S V/AA3R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES

2sb772

Abstract: 2SB772L 2SB772L TO-92NL T6C transistor 2SB772 TO-252 2SB772 TO-126 2SB772 TO-251 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 TRANSISTOR Transistor 2sb772
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 TO-126C

Contextual Info: 2SB772Q PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1     Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -3 3.EMITTER Collector-base voltage

2SD882

Abstract: complement 2sd882 2SB772 2SB772 TO-126
Contextual Info: Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1

2SB772 SMD

Abstract: smd 2sb772 2a smd 2SB772 Transistor 2sb772 smd transistor 2A 2SB772 TRANSISTOR 2SB772 equivalent smd 2a transistor
Contextual Info: Transistors SMD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE sat -0.5(@ IC=-2A,IB=-0.2A) Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter

2SB772S-T92-B

Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES

2SB778

Abstract: 2SD998 audio amplifier 50w ic
Contextual Info: SavantIC Semiconductor Product Specification 2SB778 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SD998 APPLICATIONS ·High power amplifier applications ·Recommended for 45~50W audio frequency amplifier output stage

2SD998

Abstract: 2SB778
Contextual Info: SavantIC Semiconductor Product Specification 2SD998 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SB778 APPLICATIONS ·High power amplifier applications ·Recommended for 45~50W audio frequency amplifier output stage

2SD998

Abstract: 2SB778 transistor 2SD998 2sd998 transistor SILICON PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB778 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD998 APPLICATIONS ·High power amplifier applications

2SB775

Abstract: 2SD895
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB775 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD895

POWER AND MEDIUM POWER TRANSISTOR 2SB772

Abstract: 2SB772 TO-126 2SB772 2SD882
Contextual Info: STC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The STC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A

2SB778

Abstract: SC-65
Contextual Info: 2SB778 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! High Current Capability High Power Dissipation ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage

2SB772S

Contextual Info: ST 2SB772S PNP Silicon Epitaxial Transistor MEDIUM POWER LOW VOLTAGE TRANSISTOR The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A

Contextual Info: UTC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-251 1:BASE 2:COLLECTOR 3: EMITTER

2SD882

Abstract: 2sb772 D882 p h D882 transistor D882 datasheet 2SD882 pnp 2SB772 equivalent br b772 D882 B772 transistor b772
Contextual Info: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)

Contextual Info: MCC 2SB772
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 1.25Watts of Power Dissipation.

2SB777

Abstract: 2SD907 SC-65
Contextual Info: 2SB777 P I M P X t _ E P I T A X I A L PLANER TYPE • ! Outline Drawings I Features TV-f-'itfM.y.' • hfEWJ— • ^ W ijiE T ib S • A S C W /S l' • B 1H H 4 Excellent linearity in hFE H igh co lle ctor cu rre n t Excellent safe operating area High reliability

2SB77

Abstract: 2sb770 2SB77 V 2SB77A 2SB77C 50Q2 SB77A TI-85 2SB77-A
Contextual Info: 2SB77 , 2SB77A® GERMANIUM PNP ALLOYED JUNCTION y j u v - f r A PNP " jï'sy m LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT Collector Mark — —10.2m ax — - ^ -1 4 .6 m in —' _ * • f ^ ♦ -a. 1. x i y 9 ! E m itte r 2. -< — X ! Base [ 2 3. 3 ^

Contextual Info: ST 2SB772T PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: UTC 2SB772ANL PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772ANL is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A