2SB649A Search Results

2SB649

Abstract: 669a 2SB649A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity

transistor 649A

Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor 649A

Abstract: 2SB649 2SB649A 649a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

Contextual Info: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor 2sb649

Abstract: 2SB649A 2SB649
Contextual Info: 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE

Contextual Info: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

2sd649

Abstract: transistor 649A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2Sd649A

Abstract: transistor 649A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage

2SB649A

Abstract: 2SB649
Contextual Info: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range

b649a

Abstract: B649 2B649 2SD66 2SB649A
Contextual Info: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline T O -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649

sb649a

Abstract: Sb649
Contextual Info: HITACHI 2SB649, 2SB649A S IU C O N PNP EPITAXIAL LOW FREQ UENC Y'PO W ER AMPLlFiER CO M PLEM ENTARY PAIR W ITH 2SD669/A 3 ’-’ ? , JXOiO.S. 15*5*0.5 . . „ 1 7 n h 7 . ? : -M J ¿ •'s • •J,in; i< /-vS*> ^ = ¿ 3 ! . . . . i . E m iiK ?

to-126 transistor

Abstract: transistor C 2290 2sb649 TO126 transistor 2SB649A TO126 transistor 1060 Transistor TO-126
Contextual Info: 2SB649/2SB649A PNP TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 3 10.60 0 11.00 0 2 1 0.000 0.300 Features 2.100 2.300 Low frequency power amplifier complementary pair with 2SD669/A 1.170

2SB649A

Abstract: 2sb649 2SB649A HITACHI DSA003644
Contextual Info: 2SB649, 2SB649A Silicon PNP Epitaxial ADE-208-856 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C)

2SB649A

Abstract: 2SB649 equivalent 2SB6490 2SB649
Contextual Info: 2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2±0.2 8.0±0.2 FEATURES 2.0±0.2 4.14±0.1 Power smplifier applications O3.2±0.1 O2.8±0.1 11.0±0.2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL

2SB649AG

Abstract: 2sb669
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A Lead-free: 2SB649L/2SB649AL Halogen-free: 2SB649G/2SB649AG „ ORDERING INFORMATION

2SB649

Abstract: 2SB649A u02a
Contextual Info: HITACHI 2SB649, 2SB649A SILICON PNP EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD669/A 1. Em illcr 2. Collector .1. 03« C iiiì?PMQn*t in Him) (JE D E C TO-126 MOD.) • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Iiem Symbol 2SB649

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB649/2SB649A TRANSISTOR PNP 1. EMITTER FEATURES z High Collector Current z High Collector-Emitter Breakdown Voltage z Low Saturation Voltage 2. COLLECTOR

2SB649A

Abstract: TO-126C 2SB649
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2Sd649A

Abstract: 0038a 2sb649a
Contextual Info: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc $ 25°C TO-126 ABSOLUTE M AXIM U M RATINGS TA = 25 °C Item Symbol 2SB649A Unit Collector to base voltage V CBO -180 V Collector to emitter voltage V CEO -160 V

2SB649A

Abstract: 2SB649 equivalent 2SB649
Contextual Info: 2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SB649 2SB649A Unit Collector-Emitter Voltage VCBO Collector-Base Voltage VCEO Emitter-Base Voltage