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2SB60 Datasheets (118)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB60	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	38.71KB	1
2SB60	General Instrument	Bridge Rectifier Cross Reference Guide	Scan	PDF	69.26KB	2
2SB60	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.43KB	1
2SB60	Unknown	Cross Reference Datasheet	Scan	PDF	34.22KB	1
2SB60	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	146.69KB	1
2SB60	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	34.99KB	1
2SB60	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.84KB	1
2SB60	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	93.57KB	1
2SB60	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	109.3KB	2
2SB600	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	43.05KB	1
2SB600	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	77.37KB	1
2SB600	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	151.05KB	1
2SB600	Unknown	Transistor Replacements	Scan	PDF	74.04KB	1
2SB600	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.69KB	1

2SB600	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	133.79KB	1
2SB600	Unknown	Cross Reference Datasheet	Scan	PDF	39.51KB	1
2SB600	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	64.48KB	1
2SB600	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.22KB	1
2SB600	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.54KB	1
2SB600	Unknown	NPN/PNP Silicon Triple Diffused MESA Transistor, Audio Frequency Power Amp	Scan	PDF	47.42KB	1

2SB60 Price and Stock

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Renesas Electronics Corporation 2SB605-T-AZ Trans GP BJT PNP 50V 0.7A 3-Pin SP-8 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB605-T-AZ		42,000		221	1 - 10 - 100 - 1000 $1.52 10000 $1.43	Buy Now
Rochester Electronics	2SB605-T-AZ		42,000		1	1 - 10 - 100 $1.36 1000 $1.22 10000 $1.14	Buy Now
Renesas Electronics Corporation 2SB605(1)-AZ 2SB605(1)-AZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB605(1)-AZ		7,122		219	1 - 10 - 100 - 1000 $1.52 10000 $1.44	Buy Now
Rochester Electronics	2SB605(1)-AZ		7,122		1	1 - 10 - 100 $1.37 1000 $1.22 10000 $1.15	Buy Now
Renesas Electronics Corporation 2SB601-AZ Trans Darlington NPN 300V 5A 1500mW 3-Pin(3+Tab) MP-25
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB601-AZ		4,421		233	1 - 10 - 100 - 1000 $1.45 10000 $1.36	Buy Now
Rochester Electronics	2SB601-AZ		4,453		1	1 - 10 - 100 $1.29 1000 $1.16 10000 $1.09	Buy Now
Panduit Corp LAM2SB600-38-1Y - Bulk (Alt: LAM2SB600-38-1Y)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LAM2SB600-38-1Y	Bulk		14 Weeks	1	1 $107.74 10 $101.14 100 $99.57 1000 $99.57 10000 $99.57	Buy Now
Mouser Electronics	LAM2SB600-38-1Y					1 $76.55 10 $71.27 100 $71.27 1000 $71.27 10000 $71.27	Get Quote
Newark	LAM2SB600-38-1Y	Bulk			1	1 $97.04 10 $97.04 100 $97.04 1000 $97.04 10000 $97.04	Buy Now
RS	LAM2SB600-38-1Y	Bulk	1	3 Weeks	1	1 $56.05 10 $56.05 100 $56.05 1000 $56.05 10000 $56.05	Buy Now
Sager	LAM2SB600-38-1Y				1	1 $72.60 10 $65.54 100 $58.26 1000 $57.55 10000 $57.55	Buy Now

Master Electronics	LAM2SB600-38-1Y		10			1 $118.94 10 $107.34 100 $92.03 1000 $92.03 10000 $92.03	Buy Now
Taiwan Semiconductor D2SB60 C2G Diode Rectifier Standard Bridge Single 600V 2A 4-Pin Case GBL Tube - Rail/Tube (Alt: D2SB60 C2G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D2SB60 C2G	Tube			1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SB60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD555 Abstract: 2SB600 Contextual Info: Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN	Original	2sd555 2sb600	PDF
2SB600 Abstract: 2SD555 Contextual Info: SavantIC Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING see Fig.2 PIN	Original	2sb600 2sd555 -25ma -200v	PDF
t430 transistor Abstract: 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K Contextual Info: SEC j mTi\rx A S ilic o n T r a n s is to r _ 2SB605 P N P ik 7 + '> 7 ^ ' > >J □ > h =7 7 .9 PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o t — r" 'i 7 > ~7 ° ¥ f c o V KMffl/ PACKAGE DIMENSIONS y 4 U n it : mm	OCR Scan	2sb605 02sd5711 pws10ms t430 transistor +85252 f ic bt129 ic 2576 5.0v lt 5252 ti42 t514 transistor transistor 2sb605 016k	PDF
2SD555 Abstract: 2SB600 NEC 2SB600 2SD666C 2SD666 Contextual Info: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SB600/2SD555 AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D ESC R IPTIO N PACKAGE DIM EN SIO N S in millimeters inches The 2SB600/2SD555 are triple diffused high power transistors designed for use	OCR Scan	2sb600/2sd555 2sb600 2sd555 2sb600 nec +22sd666c 2sd666	PDF
2SB600 Abstract: 2SD555 Contextual Info: JMnic Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1	Original	2sb600 2sd555 -25ma -200v	PDF
2SB600 Abstract: 2SD555 Contextual Info: Inchange Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2	Original	2sb600 2sd555 -200v	PDF
2SB641 r Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686 Contextual Info: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #	OCR Scan	2sb603 2sb605 2sb621 2sb621a +152sb624 2sb631 -0b648 2sd668a o-126 2sb648a 2sb641 r 2sb641 2sd659 2sd689 2sb678 2sb647b 2sb646a 2sb646 2sb686	PDF
2SD555 Abstract: 2SB600 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier Contextual Info: r 2SD555/2SB600 2 8 0 5 5 5 /2SB600 v & i / 'J 3 V I* 7 V * * * / N PN /PN P N P N /P N P SILICON TRIPLE DIFFUSED MESA TRANSISTOR Frequency Power Amplifier ft »/F E A T U R E S • Mfflttifi 200~300W Hi-Fi 7 v 7'iOtB^/M zi v y ' t v 9 ') \ v y 7* ? X *i> Z o	OCR Scan	2sd555/2sb600 00-300w 2sb600 2sd555 +8ycles50 2sb600/2sd555 200/200v 50/50ma 10/10a 300w transistor audio amplifier 200v transistor npn 10a 300 watts audio amplifier	PDF
2SB1099 Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613 Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A	OCR Scan	2sa1706 2sb880 2sb676 2sb601 +152sb950 2sb1341 2sb886 2sb673 2sb1108 2sb1343 2sb1099 2sb615 nec 2sb1099 b676 1086a 1091 2s8834 2sb536 toshiba 2sb613	PDF
2SB600 Abstract: 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB600 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 APPLICATIONS ·Audio frequency power amplifier applications.	Original	2sb600 -200v 2sd555 -50ma +3200w audio amplifier ic 200w audio power amplifier 200w power transistors	PDF
2SB605 Abstract: transistor 2sb605 2SD571 Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SB605 The 2SB605 is designed for use in driver and output stages of audio frequency amplifiers. PACKAG E D IM E N S IO N S in millimeters inches FE A T U R E S 7 0 MAX (0 275 MAX • High Total Power Dissipation and High Breakdown Voltage:	OCR Scan	2sb605 2sd571 -5m-10m-20m -50m-+200m-200m-500m-i transistor 2sb605	PDF
2SB638 Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SB793 2SA1108 Contextual Info: - 66 - « m Type ft No. € M a n uf. E ft 2SA886 2SB1314 2SB601 2SB1434 2SA1286 893 - 2SB 894 ^ 2 SB 895 2SB 895A 2SB 899 2SB 900 2SB 901 2S8 902 2SB 905 2SB 908 2SB 907 2SB 908 2SB 909- 2SB 910- 2SB 911 2SB 912 2SB 913 2SB 914 ; - „ . - 2SB 915 2SB 916	OCR Scan	2sa984 2sa562tm 2sa953 2sa673a +142sa720 2sb1142 2sa1217 2sb744 2sa715 2sa886 2sb638 2sb897 2s8834 2sa1015 2sb596 2sb1314 2sb793 2sa1108	PDF
2SB601 Abstract: ic3a 17C IC Contextual Info: SavantIC Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications	Original	2sb601 o-220c -100v ic3a +117c ic	PDF
2SB609 Contextual Info: SavantIC Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	2sb609 -10ma	PDF

2sb605 Abstract: transistor 2sb605 Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB605 AUDIO FREQUENCY POWER AM PLIFIER PNP SILICON EPITAXIAL TRANSISTOR D E SC R IP T IO N The 2 S B 6 0 5 is designed for use in driver output stages of audio frequency amplifiers. FEATURES PA C K A G E D IM E N S IO N S	OCR Scan	2sb605 transistor 2sb605	PDF
2SD555 Abstract: 2SB600 Contextual Info: SavantIC Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN	Original	2sd555 2sb600	PDF
2SD560 Abstract: 2SB601 Contextual Info: SavantIC Semiconductor Product Specification 2SD560 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use PINNING PIN DESCRIPTION	Original	2sd560 o-220c 2sb601	PDF
2SB601 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage	Original	2sb601	PDF
2SB609 Contextual Info: Inchange Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	2sb609 -10ma	PDF
2SB601 Abstract: ic3a Contextual Info: Inchange Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications	Original	2sb601 o-220c ic3a	PDF
DARLINGTON 3A 100V npn Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601	Original	2sb601 vcc50v 2sd560 darlington 3a 100v npn +8darlington power transistor ic 3a hfe 500 darlington npn silicon diode darlington 30a 100v npn 2sd560 transistor npn transistor 5v darlington high voltage switching npn power darlington power darlington npn transistor	PDF
2sb601 Abstract: 2SB60 Contextual Info: JMnic Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications	Original	2sb601 o-220c -100v 2sb60	PDF
S1WB(A)60B Abstract: LN1VB60 LN1WBA60 LN2SB60 LN6SB60 S1NB20 S1YB20 S1ZB20 Contextual Info: Bai 1V iL/gw tötete iWgJg©- ®fexa ©g Electrical Characteristics Absolute Maximum Ratings Type No. V rm [V ] L.M1 W B A 6 0 L N 1V B 6 0 LN 2SB60 600 IliilSSlSSIlB LN6SB60 io [A ] - Conctas: Tc [ ”C ] IFSM 1.1 25* 50 Tstg Vf (maxi Tj iäiiiSS. I=	OCR Scan	ln1wba60 ln1vb60 ln2sb60 ln6sb60 +4s1yb20 s1zb20 s1nb20 s1wb(a)60b	PDF
BA60 Abstract: rectifier s1wb Bridge diodes Contextual Info: Rectifier Diodes Low Noise Bridge Diodes Electrical Characteristics Absolute Maximum Ratings rm lo Conditions [V] [A] [°C] V Part No. If s m Tstg Tj [A] [°C] [°C] Ir tre eil eja ejc Conditions max (max) (max) (max) (max) If V r=Vrm [A] [mA] Vf (max) To	OCR Scan	ln1vb60 2sb60 4sb60 6sb60 +6s1yb20 s1zb20 s1nb20 ba60 rectifier s1wb bridge diodes	PDF

2SB60 Search Results

2SB60 Datasheets (118)

2SB60 Price and Stock

Renesas Electronics Corporation 2SB605-T-AZ

Renesas Electronics Corporation 2SB605(1)-AZ

Renesas Electronics Corporation 2SB601-AZ

Panduit Corp LAM2SB600-38-1Y

Taiwan Semiconductor D2SB60 C2G

2SB60 Datasheets Context Search

2SD555

2SB600

t430 transistor

2SD555

2SB600

2SB600

2SB641 r

2SD555

2SB1099

2SB600

2SB605

2SB638

2SB601

2SB609

2sb605

2SD555

2SD560

2SB601

2SB609

2SB601

DARLINGTON 3A 100V npn

2sb601

S1WB(A)60B

BA60