2SB1434 Search Results

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification

2SB1434

Abstract: 2SD2177
Contextual Info: Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SB1434.

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB638

Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SB793 2SA1108
Contextual Info: - 66 - « m Type ft No. € M a n uf. E ft 2SA886 2SB1314 2SB601 2SB1434 2SA1286 893 - 2SB 894 ^ 2 SB 895 2SB 895A 2SB 899 2SB 900 2SB 901 2S8 902 2SB 905 2SB 908 2SB 907 2SB 908 2SB 909- 2SB 910- 2SB 911 2SB 912 2SB 913 2SB 914 ; - „ . - 2SB 915 2SB 916

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1424

Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Contextual Info: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177 pc 2505
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ