2SB14 Search Results

100w audio amplifier

Contextual Info: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)

2SB1455

Abstract: 2SD2203
Contextual Info: Inchange Semiconductor Product Specification 2SB1455 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications

D2200

Contextual Info: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

ic est 7502

Abstract: B1439 2SB1439 2SD2183
Contextual Info: Power Transistors 2SB1439 2SB1439 Silicon PNP Epitaxial Planar Type • Package Dim ensions AF Output Am plifier C o m plem entary Pair with 2 S D 2 1 8 3 ■ Features • Low co llector-em itter saturation voltage VcE(sao • High co llector-em itter voltage

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

2SB1418

Abstract: 2SB1418A 2SD2138
Contextual Info: Power T ransistors 2SB1-418, 2SB1418Ä 2SB1418, 2SB1418A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD 2138 • Features • H igh D C c u r re n t g ain I i f e • H igh s p e e d sw itc h in g

2SB1407S

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low frequency power amplifier. Unit: mm +0.1 -0.1 0.127 max +0.25 2.65 -0.1

Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

b1457

Abstract: B1457 transistor 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

Contextual Info: Product specification 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor.

B1495

Abstract: 2SB1495 2SD2257 100-C3000
Contextual Info: 2SB1495 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1495 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −1.5 A)

D2257

Abstract: 2SB1495 2SD2257
Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

2SB1463J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C

EN3152

Abstract: 3152 2069B 2SB1452
Contextual Info: Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment.

EN3236

Abstract: 2SB1405
Contextual Info: Ordering number:EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064 [2SB1405] E : Emitter C : Collector

2069B

Abstract: 2SB1449
Contextual Info: Ordering number:EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.

2SB1453

Abstract: NEC 2SB1453
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid

2SB1468

Contextual Info: Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] · Micaless package facilitating mounting.

2SB1495

Abstract: 2SD2257
Contextual Info: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications

2SB1494

Abstract: 2SD2256 DSA003644
Contextual Info: 2SB1494 Silicon PNP Triple Diffused ADE-208-878 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C)

2SB1409

Abstract: 2SD2122 2SD2123 DSA003645
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial ADE-208-926 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector