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    2SA1735 Search Results

    2SA1735 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1735
    		Kexin Power Switching Applications Original PDF 227.21KB 2
    2SA1735
    		Toshiba PNP transistor Original PDF 152.03KB 4
    2SA1735
    		TY Semiconductor Power Switching Applications - SOT-89 Original PDF 258.52KB 2
    2SA1735
    		Unknown Japanese Transistor Cross References (2S) Scan PDF 35.2KB 1
    2SA1735
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 50.05KB 1
    2SA1735
    		Unknown The Transistor Manual (Japanese) 1993 Scan PDF 114.75KB 2
    2SA1735
    		Unknown Transistor Substitution Data Book 1993 Scan PDF 30.49KB 1
    2SA1735
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.54KB 1
    2SA1735
    		Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF 173.18KB 4
    2SA1735
    		Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF 173.38KB 4
    SF Impression Pixel

    2SA1735 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SA1735(TE12L,F)

    Trans GP BJT PNP 50V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA1735(TE12L,F) 2,000 1,601
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21
    		Buy Now
    Rochester Electronics 2SA1735(TE12L,F) 2,000 1
    • 1 -
    • 10 -
    • 100 $0.23
    • 1000 $0.19
    • 10000 $0.17
    		Buy Now

    Toshiba America Electronic Components 2SA1735

    1000MA, 50V, PNP, SI, SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1735 767
    • 1 $0.54
    • 10 $0.54
    • 100 $0.36
    • 1000 $0.25
    • 10000 $0.25
    		Buy Now

    2SA1735 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package


    OCR Scan     		2sa1735-500ma2sc4540-10ma+3-100ma-700ma-25ma PDF

    Contextual Info: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25


    Original     		2sa1735-500ma2sc4540-25ma+1-100ma PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


    Original     		2sa17352sc4540 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)


    Original     		2sa17352sc4540sc-62 PDF

    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


    Original     		2sa17352sc4540sc-62 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: TO SHIBA 2SA1735 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX — j- 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (Iq = —500mA)


    OCR Scan     		2sa1735--500ma2sc4540100ma+2700ma--25ma PDF

    smd marking KC

    Abstract: smd diode marking KC 2SC4540 2SA1735 marking KC smd marking TF
    Contextual Info: Transistors SMD Type Power Switching Applications 2SC4540 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1735


    Original     		2sc4540500ma2sa1735100ma+5700masmd marking kcsmd diode marking kcmarking kcsmd marking tf PDF

    Contextual Info: T O SH IB A 2SA1735 2 S A 1 735 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1 .6 M A X . —J- - 4 .6 M A X . 1 .7 M A X . 0 .4 + 0 .0 5 _E Low Saturation Voltage


    OCR Scan     		2sa1735500ma2sc4540 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: TO SH IBA 2SA1735 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Satu ra tio n V oltage 0.4 ±0.05 : V q ^ (s a t)“ —0.5V (M ax.)


    OCR Scan     		2sa17352sc4540 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


    Original     		2sa17352sc4540 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: TOSHIBA 2SA1735 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 ±0.05 : V q ^ (sat)“ —0.5V (Max.) (Iq = - 500mA)


    OCR Scan     		2sa1735500ma2sc4540 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)


    Original     		2sa17352sc4540sc-6220070701-ja PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) · High speed switching time: tstg = 0.25 µs (typ.)


    Original     		2sa17352sc4540 PDF

    2SA1735

    Abstract: marking LC 2SC4540
    Contextual Info: Transistors SMD Type Power Switching Applications 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540


    Original     		2sa1735-500ma2sc4540-10ma+4-100ma-700ma-25mamarking lc PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 s (typ.)


    Original     		2sa17352sc4540 PDF

    2SA1148

    Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
    Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9


    OCR Scan     		2sa17252sa17262sa17272sa1728+162sa1729sa17302sa1731sc-702sa17482sc45642sa1148sa17572sa11262sc4562sa11402sa17472sa17552sa11382sa17632sa1130 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 s (typ.)


    Original     		2sa17352sc4540 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2n39032n39042n39052n3906+162n41232n41242n41252n41262n44012n44022n3904 331 transistorc549 transistor2sk1227transistor 1201 1203 1205transistor c549transistor hand book2n5551 2sc1815 2sk2462n4401 33102cz27transistor 737 PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)


    Original     		2sc45402sa1735sc-6220070701-ja PDF

    Contextual Info: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)


    OCR Scan     		2sc4540500ma2sa1735 PDF

    2SA1735

    Abstract: 2SC4540 005g
    Contextual Info: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		2sc4540500ma2sa1735250mm2x0+1005g PDF

    2SA1735

    Abstract: 2SC4540
    Contextual Info: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		2sc4540500ma2sa1735250mm2 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		sce0003aesm 740transistor smd t04 51d245a+7lm2804transistor smd t04solar garden light controller 4 pin2fu smd transistortransistor t04 smdpnp octal darlington transistor arrays dipwb126 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr PDF