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    2SA115 Search Results

    2SA115 Datasheets (103)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA115
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SA115
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 34.52KB 1
    2SA115
    Unknown The Japanese Transistor Manual 1981 Scan PDF 108KB 2
    2SA115
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 88.09KB 1
    2SA115
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90.38KB 1
    2SA115
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.03KB 1
    2SA115
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 78.96KB 1
    2SA115
    Unknown Cross Reference Datasheet Scan PDF 37.49KB 1
    2SA1150
    Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-4E1A) Original PDF 195.83KB 3
    2SA1150
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 108.71KB 2
    2SA1150
    Unknown Transistor Substitution Data Book 1993 Scan PDF 35.09KB 1
    2SA1150
    Unknown The Japanese Transistor Manual 1981 Scan PDF 102.61KB 2
    2SA1150
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 147.85KB 1
    2SA1150
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.52KB 1
    2SA1150
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 77.04KB 1
    2SA1150
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162KB 1
    2SA1150
    Unknown Japanese Transistor Cross References (2S) Scan PDF 37.04KB 1
    2SA1150
    Unknown Cross Reference Datasheet Scan PDF 35.19KB 1
    2SA1150
    Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF 158.45KB 3
    2SA1150
    Toshiba TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF 133.28KB 2
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    2SA115 Price and Stock

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA1152-A 3,500 810
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    • 1000 $0.43
    • 10000 $0.38
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    Rochester Electronics 2SA1152-A 25,230 1
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    • 100 $0.41
    • 1000 $0.34
    • 10000 $0.30
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    3M Interconnect 1U30A-MB2-SA1-150

    USB3 Vision Industrial Camera Cable Assembly 1U30A-MB2-SA1-150, Black, 5 ea/Case - Bulk (Alt: 7010684086)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1U30A-MB2-SA1-150 Bulk 11 Weeks, 6 Days 25
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    • 100 $31.20
    • 1000 $30.01
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    Master Electronics 1U30A-MB2-SA1-150
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    • 100 $29.52
    • 1000 $29.52
    • 10000 $29.52
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    3M Interconnect 1U30A-MB2-SA1-150-CE

    USB3 Vision Cable Assembly 1U30x Series 1U30A-MB2-SA1-150-CE, 5 ea/Case - Bulk (Alt: 7100279829)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1U30A-MB2-SA1-150-CE Bulk 16 Weeks, 1 Days 25
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    Master Electronics 1U30A-MB2-SA1-150-CE
    • 1 -
    • 10 $38.93
    • 100 $29.52
    • 1000 $29.52
    • 10000 $29.52
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    3M 1U30A-TC2-SA1-150

    USB3 VISION INDUSTRIAL CAMERA CABLE ASSEMBLY, 1U30A-TC, 1.5M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1U30A-TC2-SA1-150 Bulk 27 Weeks 5
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    • 10 $39.33
    • 100 $38.09
    • 1000 $38.09
    • 10000 $38.09
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    3M 1U30S-MB2-SA1-150 (7010684769)

    CABLE, PLUG TO PLUG, USB MICRO B TO USB STANDARD A, BLACK, 1.5 METERS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1U30S-MB2-SA1-150 (7010684769) Bulk 106 Weeks 25
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    • 100 $55.61
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    2SA115 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2710

    Abstract: 2SA1150
    Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    2sc27102sa1150 PDF

    2SA1150

    Abstract: 2SC2710
    Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original
    2sa11502sc2710 PDF

    2SA1150

    Abstract: 2SC2710
    Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2sa11502sc2710 PDF

    25C2710

    Abstract: 2SA1150 2SC2710
    Contextual Info: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2sc27102sa115025c2710 PDF

    Contextual Info: 2SA1156 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1156 PDF

    N1H1

    Contextual Info: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2sa11502sc271055maxn1h1 PDF

    Contextual Info: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1150yfreq120m PDF

    2SA115

    Contextual Info: 2SA115 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A) Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2sa115freq30m PDF

    2SC2710

    Abstract: 2SA1150
    Contextual Info: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    2sc27102sa1150 PDF

    Contextual Info: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


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    2sc18152sc28882sa11582sa1015+42sc19232sc380tm2sc941tm50vmax PDF

    2SB1545

    Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
    Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970


    OCR Scan
    2sa11562sa11102sa13832sa1535a+142sa15352sa11822sa14642sa11212sb9702sb15452sa13092sa17762sa10152sa170b2sa11152sa10912sa17442sb709 PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    2n2222/aktn2222/a2sa1150kta1272+162sa15102sb546a2n2369/aktn2369/a2sa1151kta1266lm8550ktd20262sc2320 equivalentnec 12f datasheet2n3904 motorola2sc2240 equivalent2n3906 motorola2sc19832n5400 motorola2sd1960 PDF

    2SA1156

    Abstract: 2SA115 2SA 1156 2SC2752 cidc
    Contextual Info: PNP SILICON POWER TRANSISTOR 2S A 1156 DESCRIPTION The 2SA1156 is suitable for Low Power Switching regulator, PACKAGE DIMENSIONS DC-DC converter and High Voltage Switch. FEATURES in millimeters inches 8.5 MAX. (0.334 MAX.) • High Breakdown Voltage. • Low Collector Saturation Voltage.


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    2sa11562sc2752m-2002sa115+22sa 1156cidc PDF

    Contextual Info: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1150ofreq120m PDF

    A1150 transistor

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
    Contextual Info: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL


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    2sa11502sc271055maxa1150 transistor+4toshiba transistor silicon pnp epitaxial typea1150transistor a1150sa1150 PDF

    2SC2710

    Abstract: 2SA1150 C1602
    Contextual Info: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2sc27102sa115055maxc1602 PDF

    A1150 transistor

    Abstract: 2SA1150 2SC2710 A1150
    Contextual Info: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2sa11502sc2710a1150 transistora1150 PDF

    2SA1150

    Abstract: 2SA115 2SC2710
    Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2sa11502sc27102sa115 PDF

    2SA1150

    Contextual Info: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1150freq120m PDF

    Contextual Info: 2SA1151 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1151freq180m PDF

    Contextual Info: 2SA1154 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)700m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1154freq120m PDF

    2sA1152

    Contextual Info: 2SA1152 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1152freq100m PDF

    Contextual Info: 2SA1158 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2sa1158freq100meq100m PDF

    2SA1150

    Abstract: 2SC2710
    Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2sa11502sc2710 PDF