2SA115 Search Results

2SA115 Datasheets (103)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA115	Various Russian Datasheets	Transistor	Original	PDF	84.39KB	8
2SA115	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	34.52KB	1
2SA115	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	108KB	2
2SA115	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	88.09KB	1
2SA115	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.38KB	1
2SA115	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	41.03KB	1
2SA115	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	78.96KB	1
2SA115	Unknown	Cross Reference Datasheet	Scan	PDF	37.49KB	1
2SA1150	Toshiba	TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)	Original	PDF	195.83KB	3
2SA1150	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	108.71KB	2
2SA1150	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.09KB	1
2SA1150	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.61KB	2
2SA1150	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	147.85KB	1
2SA1150	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.52KB	1

2SA1150	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	77.04KB	1
2SA1150	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	162KB	1
2SA1150	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	37.04KB	1
2SA1150	Unknown	Cross Reference Datasheet	Scan	PDF	35.19KB	1
2SA1150	Toshiba	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF	158.45KB	3
2SA1150	Toshiba	TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS)	Scan	PDF	133.28KB	2

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3M Interconnect 1U30A-MB2-SA1-150 USB3 VISION INDUSTRIAL CAMERA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150	Bulk	30		1	1 $40.72 10 $34.61 100 $29.43 1000 $27.59 10000 $27.59	Buy Now
Avnet Americas	1U30A-MB2-SA1-150	Bulk		19 Weeks, 1 Days	25	1 - 10 - 100 $29.43 1000 $28.31 10000 $28.31	Buy Now
Mouser Electronics	1U30A-MB2-SA1-150					1 - 10 - 100 $29.42 1000 $27.58 10000 $27.58	Get Quote
Master Electronics	1U30A-MB2-SA1-150					1 - 10 $38.93 100 $29.52 1000 $29.52 10000 $29.52	Buy Now
3M Interconnect 1U30S-MB2-SA1-150 USB3 CABLE ASSEMBLY 1.5 METER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30S-MB2-SA1-150	Box	21		1	1 $56.19 10 $47.76 100 $40.60 1000 $38.75 10000 $38.75	Buy Now
Mouser Electronics	1U30S-MB2-SA1-150		45			1 $54.31 10 $46.05 100 $39.90 1000 $39.90 10000 $39.90	Buy Now
Master Electronics	1U30S-MB2-SA1-150					1 - 10 $55.35 100 $41.97 1000 $41.97 10000 $41.97	Buy Now
3M Interconnect 1U30A-MB2-SA1-150-CE USB3 VISON INDUSTRIAL CAMERA CAB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150-CE	Bulk	10		1	1 $40.72 10 $34.61 100 $29.43 1000 $27.59 10000 $27.59	Buy Now
Avnet Americas	1U30A-MB2-SA1-150-CE	Bulk		25 Weeks, 1 Days	25	1 - 10 - 100 $29.43 1000 $28.31 10000 $28.31	Buy Now
Mouser Electronics	1U30A-MB2-SA1-150-CE					1 - 10 - 100 $46.10 1000 $46.10 10000 $46.10	Get Quote
Master Electronics	1U30A-MB2-SA1-150-CE					1 - 10 $38.93 100 $29.52 1000 $29.52 10000 $29.52	Buy Now
Rochester Electronics LLC 2SA1152-A TRANS PNP 80V 0.3A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1152-A	Bulk			701	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
3M Interconnect 1U30A-TC2-SA1-150 3M USB3 VISION INDUSTRIAL CAMERA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-TC2-SA1-150	Bulk			1	1 $37.63 10 $31.98 100 $27.19 1000 $25.49 10000 $25.49	Buy Now
Mouser Electronics	1U30A-TC2-SA1-150					1 $37.63 10 $31.98 100 $27.18 1000 $25.48 10000 $25.48	Get Quote

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2SA115 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2710 Abstract: 2SA1150 Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2710 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	2SC2710 2SA1150 2SC2710 2SA1150	PDF
2SA1150 Abstract: 2SC2710 Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1150 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	2SA1150 2SC2710 2SA1150 2SC2710	PDF
2SA1150 Abstract: 2SC2710 Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SA1150 2SC2710. 2SA1150 2SC2710	PDF
25C2710 Abstract: 2SA1150 2SC2710 Contextual Info: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC2710 2SA1150 25C2710 2SA1150 2SC2710	PDF
Contextual Info: 2SA1156 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1156	PDF
N1H1 Contextual Info: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2SA1150 2SC2710. 55MAX. N1H1	PDF
Contextual Info: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1150Y Freq120M	PDF
2SA115 Contextual Info: 2SA115 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A) Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	2SA115 Freq30M	PDF
2SC2710 Abstract: 2SA1150 Contextual Info: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SC2710 2SA1150 2SC2710 2SA1150	PDF
Contextual Info: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito \|CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400	OCR Scan	2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX	PDF
2SB1545 Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709 Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970	OCR Scan	2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709	PDF
LM8550 Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo	Original	2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960	PDF
2SA1156 Abstract: 2SA115 2SA 1156 2SC2752 cidc Contextual Info: PNP SILICON POWER TRANSISTOR 2S A 1156 DESCRIPTION The 2SA1156 is suitable for Low Power Switching regulator, PACKAGE DIMENSIONS DC-DC converter and High Voltage Switch. FEATURES in millimeters inches 8.5 MAX. (0.334 MAX.) • High Breakdown Voltage. • Low Collector Saturation Voltage.	OCR Scan	2SA1156 2SA1156 2SC2752 m-200 2SA115 2SA 1156 cidc	PDF
Contextual Info: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1150O Freq120M	PDF

A1150 transistor Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150 Contextual Info: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150	PDF
2SC2710 Abstract: 2SA1150 C1602 Contextual Info: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC2710 2SA1150 55MAX. 2SC2710 C1602	PDF
A1150 transistor Abstract: 2SA1150 2SC2710 A1150 Contextual Info: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150	PDF
2SA1150 Abstract: 2SA115 2SC2710 Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SA1150 2SC2710. 2SA1150 2SA115 2SC2710	PDF
2SA1150 Contextual Info: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1150 Freq120M	PDF
Contextual Info: 2SA1151 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1151 Freq180M	PDF
Contextual Info: 2SA1154 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)700m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1154 Freq120M	PDF
2sA1152 Contextual Info: 2SA1152 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1152 Freq100M	PDF
Contextual Info: 2SA1158 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SA1158 Freq100M eq100M	PDF
2SA1150 Abstract: 2SC2710 Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SA1150 2SC2710. 2SA1150 2SC2710	PDF

2SA115 Search Results

2SA115 Datasheets (103)

2SA115 Price and Stock

3M Interconnect 1U30A-MB2-SA1-150

3M Interconnect 1U30S-MB2-SA1-150

3M Interconnect 1U30A-MB2-SA1-150-CE

Rochester Electronics LLC 2SA1152-A

3M Interconnect 1U30A-TC2-SA1-150

2SA115 Datasheets Context Search

2SC2710

2SA1150

2SA1150

25C2710

N1H1

2SA115

2SC2710

2SB1545

LM8550

2SA1156

A1150 transistor

2SC2710

A1150 transistor

2SA1150

2SA1150

2sA1152

2SA1150